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TLC084 四路宽带高输出驱动单电源运算放大器

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPADTM packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI‘s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both


TLC080 TLC081 TLC082 TLC083 TLC084 TLC085
Number of Channels 1 1 2 2 4 4
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 4.5 4.5 4.5 4.5 4.5 4.5
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 16 16 16 16 16 16
Iq per channel(Max)(mA) 2.5 2.5 2.5 2.5 2.5 2.5
GBW(Typ)(MHz) 10 10 10 10 10 10
Slew Rate(Typ)(V/us) 16 16 16 16 16 16
VIO (25 deg C)(Max)(mV) 1.9 1.9 1.9 1.9 1.9 1.9
Offset Drift(Typ)(uV/C) 1.2 1.2 1.2 1.2 1.2 1.2
IIB(Max)(pA) 50 50 50 50 50 50
CMRR(Min)(dB) 100 80 80 80 80 80
Vn at 1kHz(Typ)(nV/rtHz) 8.5 8.5 8.5 8.5 8.5 8.5
Rating Catalog Catalog Catalog Catalog Catalog Catalog
Pin/Package 8MSOP-PowerPAD, 8PDIP, 8SOIC 8MSOP-PowerPAD, 8PDIP, 8SOIC 8MSOP-PowerPAD, 8PDIP, 8SOIC 10MSOP-PowerPAD, 14PDIP, 14SOIC 14PDIP, 14SOIC, 20HTSSOP 16PDIP, 16SOIC, 20HTSSOP
Operating Temperature Range(C) -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 0 to 70
Approx. Price (US$) 0.65 | 1ku 0.45 | 1ku 0.70 | 1ku 0.95 | 1ku 0.95 | 1ku 1.30 | 1ku
TLC084 特性
TLC084 芯片订购指南
器件 状态 温度 价格（美元） 封装 | 引脚 封装数量 | 封装载体 丝印标记
TLC084CD ACTIVE 0 to 70 1.15 | 1ku SOIC (D) | 14 50 | TUBE  
TLC084CDG4 ACTIVE 0 to 70 1.15 | 1ku SOIC (D) | 14 50 | TUBE  
TLC084CDR ACTIVE 0 to 70 0.95 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TLC084CDRG4 ACTIVE 0 to 70 0.95 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TLC084CN ACTIVE 0 to 70 0.95 | 1ku PDIP (N) | 14 25 | TUBE  
TLC084CNE4 ACTIVE 0 to 70 0.95 | 1ku PDIP (N) | 14 25 | TUBE  
TLC084CPWP ACTIVE 0 to 70 1.20 | 1ku HTSSOP (PWP) | 20 70 | TUBE  
TLC084CPWPG4 ACTIVE 0 to 70 1.20 | 1ku HTSSOP (PWP) | 20 70 | TUBE  
TLC084CPWPR ACTIVE 0 to 70 1.00 | 1ku HTSSOP (PWP) | 20 2000 | LARGE T&R  
TLC084CPWPRG4 ACTIVE 0 to 70 1.00 | 1ku HTSSOP (PWP) | 20 2000 | LARGE T&R  
TLC084ID ACTIVE -40 to 125 1.20 | 1ku SOIC (D) | 14 50 | TUBE  
TLC084IDG4 ACTIVE -40 to 125 1.20 | 1ku SOIC (D) | 14 50 | TUBE  
TLC084IDR ACTIVE -40 to 125 1.00 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TLC084IDRG4 ACTIVE -40 to 125 1.00 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TLC084IPWP ACTIVE -40 to 125 1.25 | 1ku HTSSOP (PWP) | 20 70 | TUBE  
TLC084IPWPG4 ACTIVE -40 to 125 1.25 | 1ku HTSSOP (PWP) | 20 70 | TUBE  
TLC084IPWPR ACTIVE -40 to 125 1.05 | 1ku HTSSOP (PWP) | 20 2000 | LARGE T&R  
TLC084IPWPRG4 ACTIVE -40 to 125 1.05 | 1ku HTSSOP (PWP) | 20 2000 | LARGE T&R  
TLC084 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TLC084CD Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC084CD TLC084CD
TLC084CDG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC084CDG4 TLC084CDG4
TLC084CDR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC084CDR TLC084CDR
TLC084CDRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC084CDRG4 TLC084CDRG4
TLC084CN Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC084CN TLC084CN
TLC084CNE4 Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC084CNE4 TLC084CNE4
TLC084CPWP Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TLC084CPWP TLC084CPWP
TLC084CPWPG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TLC084CPWPG4 TLC084CPWPG4
TLC084CPWPR Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TLC084CPWPR TLC084CPWPR
TLC084CPWPRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TLC084CPWPRG4 TLC084CPWPRG4
TLC084ID Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC084ID TLC084ID
TLC084IDG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC084IDG4 TLC084IDG4
TLC084IDR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC084IDR TLC084IDR
TLC084IDRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC084IDRG4 TLC084IDRG4
TLC084IPWP Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TLC084IPWP TLC084IPWP
TLC084IPWPG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TLC084IPWPG4 TLC084IPWPG4
TLC084IPWPR Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TLC084IPWPR TLC084IPWPR
TLC084IPWPRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TLC084IPWPRG4 TLC084IPWPRG4
TLC084 应用技术支持与电子电路设计开发资源下载
  1. TLC084 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPADTM Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)