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TLC082 双路宽带高输出驱动单路电源运算放大器

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPADTM packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI‘s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both


TLC080 TLC081 TLC082 TLC083 TLC084 TLC085
Number of Channels 1 1 2 2 4 4
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 4.5 4.5 4.5 4.5 4.5 4.5
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 16 16 16 16 16 16
Iq per channel(Max)(mA) 2.5 2.5 2.5 2.5 2.5 2.5
GBW(Typ)(MHz) 10 10 10 10 10 10
Slew Rate(Typ)(V/us) 16 16 16 16 16 16
VIO (25 deg C)(Max)(mV) 1.9 1.9 1.9 1.9 1.9 1.9
Offset Drift(Typ)(uV/C) 1.2 1.2 1.2 1.2 1.2 1.2
IIB(Max)(pA) 50 50 50 50 50 50
CMRR(Min)(dB) 100 80 80 80 80 80
Vn at 1kHz(Typ)(nV/rtHz) 8.5 8.5 8.5 8.5 8.5 8.5
Rating Catalog Catalog Catalog Catalog Catalog Catalog
Pin/Package 8MSOP-PowerPAD, 8PDIP, 8SOIC 8MSOP-PowerPAD, 8PDIP, 8SOIC 8MSOP-PowerPAD, 8PDIP, 8SOIC 10MSOP-PowerPAD, 14PDIP, 14SOIC 14PDIP, 14SOIC, 20HTSSOP 16PDIP, 16SOIC, 20HTSSOP
Operating Temperature Range(C) -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 0 to 70
Approx. Price (US$) 0.65 | 1ku 0.45 | 1ku 0.70 | 1ku 0.95 | 1ku 0.95 | 1ku 1.30 | 1ku
TLC082 特性
TLC082 芯片订购指南
器件 状态 温度 价格（美元） 封装 | 引脚 封装数量 | 封装载体 丝印标记
TLC082CD ACTIVE 0 to 70 0.55 | 1ku SOIC (D) | 8 75 | TUBE  
TLC082CDG4 ACTIVE 0 to 70 0.55 | 1ku SOIC (D) | 8 75 | TUBE  
TLC082CDGN ACTIVE 0 to 70 0.60 | 1ku MSOP-PowerPAD (DGN) | 8 80 | TUBE  
TLC082CDGNG4 ACTIVE 0 to 70 0.60 | 1ku MSOP-PowerPAD (DGN) | 8 80 | TUBE  
TLC082CDGNR ACTIVE 0 to 70 0.50 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC082CDGNRG4 ACTIVE 0 to 70 0.50 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC082CDR ACTIVE 0 to 70 0.45 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC082CDRG4 ACTIVE 0 to 70 0.45 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC082CP ACTIVE 0 to 70 0.45 | 1ku PDIP (P) | 8 50 | TUBE  
TLC082CPE4 ACTIVE 0 to 70 0.45 | 1ku PDIP (P) | 8 50 | TUBE  
TLC082ID ACTIVE -40 to 125 0.60 | 1ku SOIC (D) | 8 75 | TUBE  
TLC082IDG4 ACTIVE -40 to 125 0.60 | 1ku SOIC (D) | 8 75 | TUBE  
TLC082IDGNR ACTIVE -40 to 125 0.55 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC082IDGNRG4 ACTIVE -40 to 125 0.55 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC082IDR ACTIVE -40 to 125 0.47 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC082IDRG4 ACTIVE -40 to 125 0.47 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC082IP ACTIVE -40 to 125 0.47 | 1ku PDIP (P) | 8 50 | TUBE  
TLC082IPE4 ACTIVE -40 to 125 0.47 | 1ku PDIP (P) | 8 50 | TUBE  
TLC082 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TLC082CD Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082CD TLC082CD
TLC082CDG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082CDG4 TLC082CDG4
TLC082CDGN Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082CDGN TLC082CDGN
TLC082CDGNG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082CDGNG4 TLC082CDGNG4
TLC082CDGNR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082CDGNR TLC082CDGNR
TLC082CDGNRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082CDGNRG4 TLC082CDGNRG4
TLC082CDR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082CDR TLC082CDR
TLC082CDRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082CDRG4 TLC082CDRG4
TLC082CP Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC082CP TLC082CP
TLC082CPE4 Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC082CPE4 TLC082CPE4
TLC082ID Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082ID TLC082ID
TLC082IDG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082IDG4 TLC082IDG4
TLC082IDGNR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082IDGNR TLC082IDGNR
TLC082IDGNRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082IDGNRG4 TLC082IDGNRG4
TLC082IDR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082IDR TLC082IDR
TLC082IDRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC082IDRG4 TLC082IDRG4
TLC082IP Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC082IP TLC082IP
TLC082IPE4 Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC082IPE4 TLC082IPE4
TLC082 应用技术支持与电子电路设计开发资源下载
  1. TLC082 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPADTM Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)