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TLC081 单路宽带高输出驱动单电源运算放大器

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPADTM packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI‘s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both


TLC080 TLC081 TLC082 TLC083 TLC084 TLC085
Number of Channels 1 1 2 2 4 4
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) 4.5 4.5 4.5 4.5 4.5 4.5
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) 16 16 16 16 16 16
Iq per channel(Max)(mA) 2.5 2.5 2.5 2.5 2.5 2.5
GBW(Typ)(MHz) 10 10 10 10 10 10
Slew Rate(Typ)(V/us) 16 16 16 16 16 16
VIO (25 deg C)(Max)(mV) 1.9 1.9 1.9 1.9 1.9 1.9
Offset Drift(Typ)(uV/C) 1.2 1.2 1.2 1.2 1.2 1.2
IIB(Max)(pA) 50 50 50 50 50 50
CMRR(Min)(dB) 100 80 80 80 80 80
Vn at 1kHz(Typ)(nV/rtHz) 8.5 8.5 8.5 8.5 8.5 8.5
Rating Catalog Catalog Catalog Catalog Catalog Catalog
Pin/Package 8MSOP-PowerPAD, 8PDIP, 8SOIC 8MSOP-PowerPAD, 8PDIP, 8SOIC 8MSOP-PowerPAD, 8PDIP, 8SOIC 10MSOP-PowerPAD, 14PDIP, 14SOIC 14PDIP, 14SOIC, 20HTSSOP 16PDIP, 16SOIC, 20HTSSOP
Operating Temperature Range(C) -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 -40 to 125,0 to 70 0 to 70
Approx. Price (US$) 0.65 | 1ku 0.45 | 1ku 0.70 | 1ku 0.95 | 1ku 0.95 | 1ku 1.30 | 1ku
TLC081 特性
TLC081 芯片订购指南
器件 状态 温度 价格（美元） 封装 | 引脚 封装数量 | 封装载体 丝印标记
TLC081CD ACTIVE 0 to 70 0.55 | 1ku SOIC (D) | 8 75 | TUBE  
TLC081CDG4 ACTIVE 0 to 70 0.55 | 1ku SOIC (D) | 8 75 | TUBE  
TLC081CDGN ACTIVE 0 to 70 0.60 | 1ku MSOP-PowerPAD (DGN) | 8 80 | TUBE  
TLC081CDGNG4 ACTIVE 0 to 70 0.60 | 1ku MSOP-PowerPAD (DGN) | 8 80 | TUBE  
TLC081CDGNR ACTIVE 0 to 70 0.50 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC081CDGNRG4 ACTIVE 0 to 70 0.50 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC081CDR ACTIVE 0 to 70 0.45 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC081CDRG4 ACTIVE 0 to 70 0.45 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC081CP ACTIVE 0 to 70 0.45 | 1ku PDIP (P) | 8 50 | TUBE  
TLC081CPE4 ACTIVE 0 to 70 0.45 | 1ku PDIP (P) | 8 50 | TUBE  
TLC081ID ACTIVE -40 to 125 0.60 | 1ku SOIC (D) | 8 75 | TUBE  
TLC081IDG4 ACTIVE -40 to 125 0.60 | 1ku SOIC (D) | 8 75 | TUBE  
TLC081IDGNR ACTIVE -40 to 125 0.55 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC081IDGNRG4 ACTIVE -40 to 125 0.55 | 1ku MSOP-PowerPAD (DGN) | 8 2500 | LARGE T&R  
TLC081IDR ACTIVE -40 to 125 0.47 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC081IDRG4 ACTIVE -40 to 125 0.47 | 1ku SOIC (D) | 8 2500 | LARGE T&R  
TLC081IP ACTIVE -40 to 125 0.47 | 1ku PDIP (P) | 8 50 | TUBE  
TLC081IPE4 ACTIVE -40 to 125 0.47 | 1ku PDIP (P) | 8 50 | TUBE  
TLC081 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TLC081CD Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081CD TLC081CD
TLC081CDG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081CDG4 TLC081CDG4
TLC081CDGN Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081CDGN TLC081CDGN
TLC081CDGNG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081CDGNG4 TLC081CDGNG4
TLC081CDGNR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081CDGNR TLC081CDGNR
TLC081CDGNRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081CDGNRG4 TLC081CDGNRG4
TLC081CDR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081CDR TLC081CDR
TLC081CDRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081CDRG4 TLC081CDRG4
TLC081CP Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC081CP TLC081CP
TLC081CPE4 Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC081CPE4 TLC081CPE4
TLC081ID Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081ID TLC081ID
TLC081IDG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081IDG4 TLC081IDG4
TLC081IDGNR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081IDGNR TLC081IDGNR
TLC081IDGNRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081IDGNRG4 TLC081IDGNRG4
TLC081IDR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081IDR TLC081IDR
TLC081IDRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC081IDRG4 TLC081IDRG4
TLC081IP Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC081IP TLC081IP
TLC081IPE4 Pb-Free (RoHS) CU NIPDAU N/A for Pkg Type TLC081IPE4 TLC081IPE4
TLC081 应用技术支持与电子电路设计开发资源下载
  1. TLC081 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
  3. 所选封装材料的热学和电学性质 (PDF 645 KB)
  4. 高速数据转换 (PDF 1967 KB)
  5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
  6. PowerPADTM Thermally Enhanced Package (slma002g.HTM, 8 KB)
  7. 运算放大器的单电源操作 (PDF 2174 KB)
  8. Tuning in Amplifiers (PDF 44 KB)
  9. Op Amp Performance Analysis (PDF 76 KB)
  10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
  11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
  12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)