AT49BV640ST 364Mbit,
| Density | 64M |
| Organization | 4M x 16 |
| Speed | 70 ns |
| Vcc (V) | 2.7V - 3.6V |
| Pb-Free Packages |
CBGA 64 (8x8) |
64-Mbit (4M x 16), Secure 3-volt Only Memory, Top Boot Block.
The AT49BV640S(T) is a 2.7-volt 32-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The device is offered in a 64-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming. In some applications, in addition to the standard softlock sector protection mechanism, a requirement exists to allow for the permanent and irreversible locking of selected regions in the memory. The AT49BV640S(T) allows the user to permanently lock thirty-eight regions, and once activated these secure regions cannot be altered or erased through Software or Hardware at any time. Once activated, no facility exists to over-ride the secure lock mechanism. The size and the location of the secure regions is determined by the Top or Bottom Boot Block designation. The location of the secure regions is shown on pages 3 - 6. The secure regions can be locked in any sequence and at any time during normal device operation. Read operations can still be performed on any region that has the secure lock feature enabled. Full read/write operations and standard sector operations including standard Sector locking can be performed on all regions that are not secure locked.
The AT49BV640S(T) device also contains a freeze feature that will freeze the lock status of the secure regions. The freeze feature prevents any further locking of the secure regions. If the user requires certain regions to be locked, then these regions must be programmed and locked prior to activation of the freeze command. It is important to note that enabling the freeze feature is irreversible.
AT49BV640ST 特性
- Single Voltage Operation Read/Write: 2.65V - 3.6V
- Access Time – 70 ns
- Sector Erase Architecture
– One Hundred Twenty-seven 32K Word (64K Bytes) Main Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout - Fast Word Program Time – 10 μs
- Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 100 ms
- Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word - Low-power Operation
– 10 mA Active
– 15 μA Standby - VPP Pin for Write Protection and Accelerated Program Operation
- RESET Input for Device Initialization
- Softlock Sector Protection
- Secure Lock and Freeze Feature
- Top or Bottom Boot Block Configuration Available
- 128-bit Protection Register
- Minimum 100,000 Erase Cycles
- Common Flash Interface (CFI)
- CBGA Green (Pb/Halide-free/RoHS Compliant) Packaging
AT49BV640ST 订购型号
| Devices | Package |
| AT49BV640S AT49BV640ST |
CBGA 64 (8x8) |
AT49BV640ST 应用技术支持与电子电路设计开发资源下载
- ATMEL 爱特梅尔Flash 存储器AT49BV640ST 数据手册DataSheet 下载. PDF（PDF 文件格式完整版）
- 并行Flash 产品选型指南（
Excel 文档格式） - ATMEL 爱特梅尔公司全线产品目录. pdf