AT29LV512-12TU 512Kbit,Flash存储器TSOP-32封装
| Density | 512K |
| Organization | 64K x 8 |
| Speed | 120, 150 ns |
| Vcc (V) | 3.0-3.6 |
| Pb-Free Packages | TSOP 32 PLCC 32 |
512K (64k x 8), 3-Volt Read and 3-Volt Write Flash
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 54 mW over the industrial temperature range. When the device is deselected, the CMOS standby current is less than 50 μA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. To allow for simple in-system reprogrammability, the AT29LV512 does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29LV512 is performed on a sector basis; 128 bytes of data are loaded into the device and then simultaneously programmed. During a reprogram cycle, the address locations and 128 bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations. Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an internal control timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a new access for a read or program can begin.
AT29LV512-12TU 特性
- Single Supply Voltage, Range 3V to 3.6V
- 3-volt Only Read and Write Operation
- Software Protected Programming
- Low-power Dissipation
– 15 mA Active Current
– 50 μA CMOS Standby Current - Fast Read Access Time – 120 ns
- Sector Program Operation
– Single-cycle Reprogram (Erase and Program)
– 512 Sectors (128 Bytes/Sector)
– Internal Address and Data Latches for 128 Bytes - Fast Sector Program Cycle Time – 20 ms Max
- Internal Program Control and Timer
- DATA Polling for End of Program Detection
- Typical Endurance > 10,000 Cycles
- CMOS and TTL Compatible Inputs and Outputs
- Green (Pb/Halide-free) Packaging Option
AT29LV512-12TU 订购型号
| tACC (ns) |
ICC (mA) | Ordering Code | Package | Operation Range | |
| Active | Standby | ||||
| 120 | 15 | 0.05 | AT29LV512-12JU AT29LV512-12TU |
32J 32T |
Industrial (-40° to 85° C) |
AT29LV512-12TU 应用技术支持与电子电路设计开发资源下载
- ATMEL 爱特梅尔Flash 存储器AT29LV512 数据手册DataSheet 下载. PDF（PDF 文件格式完整版）
- 并行Flash 产品选型指南（
Excel 文档格式） - ATMEL 爱特梅尔公司全线产品目录. pdf
- AT29LV512 Reliability Qualification Report (Qualification, 11 pages, updated 7/06). pdf
- AT29 Series Software Chip Erase (4 pages, updated 10/98) . pdf
This Application Note describes Software Chip Erase for the AT29 Series Flash family. - Atmel AT29 Flash Memories (8 pages, updated 10/98) . pdf
This Application Note describes Atmel's AT29 Flash Memories. - Programming Atmel's AT29 Flash Family (12 pages, updated 10/98). pdf
This Application Note describes the design benefits of Atmel's AT29 Flash architecture as well as how the device ID feature is used to adjust for varying densities and supply voltages.