AT28HC64B-70JU 64Kbit,并行EEPROMs存储器PLCC-32封装

Density	64K
Organization	8K x 8
Speed	70, 90, 120 ns
Vcc (V)	4.5-5.5
Packages	PDIP 28 PLCC 32 SOIC (300mil) 28 TSOP 28
Pb-Free Packages	PDIP 28 PLCC 32 SOIC (300mil) 28 TSOP 28

64K EEPROM with 64-Byte Page Software Data Protection

The AT28HC64B is a high-performance electrically-erasable and programmable readonly memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 100 μA.

The AT28HC64B is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin. Atmel’s AT28HC64B has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking.

AT28HC64B-70JU 特征

• Fast Read Access Time – 70 ns
• Automatic Page Write Operation
  – Internal Address and Data Latches for 64 Bytes
• Fast Write Cycle Times
  – Page Write Cycle Time: 10 ms Maximum (Standard)
  2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)
  – 1 to 64-byte Page Write Operation
• Low Power Dissipation
  – 40 mA Active Current
  – 100 μA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling and Toggle Bit for End of Write Detection
• High Reliability CMOS Technology
  – Endurance: 100,000 Cycles
  – Data Retention: 10 Years
• Single 5 V ±10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Option

AT28HC64B-70JU 订购型号

tACC(ns)	ICC (mA)		Ordering Code	Package	Operation Range
	Active	AStandby
70	40	0.1	AT28HC64B-70JU	32J	Industrial (-40° to 85°C)
			AT28HC64B-70SU	28S
			AT28HC64B-70TU	28T
90	40	0.1	AT28HC64B-90JU	32J
			AT28HC64B-90PU	28P6
			AT28HC64B-90SU	28S
			AT28HC64B-90TU	28T
120	40	0.1	AT28HC64B-12JU	32J
			AT28HC64B-12SU	28S

AT28HC64B-70JU 应用技术支持与电子电路设计开发资源下载

1. ATMEL 爱特梅尔EEPROM存储器AT28HC64B 数据手册DataSheet 下载. PDF（完整版）
2. 并行EEPROM 存储器参数选型指南（Excel 文档格式）
3. EEPROM 存储器参数选型指南
4. 中文版 ATMEL 汽车应用解决方案 . pdf
5. 英文版 ATMEL 汽车应用解决方案 . pdf
6. 嵌入式系统中EEPROM文件系统的设计与实现 . PDF
7. ATMEL 爱特梅尔公司全线产品目录. pdf
8. AT28C64B Reliability Qualification Report (Qualification, 8 pages, updated 4/05) . PDF