TLE2142 二路低噪声高速精密运算放大器

The TLE214x and TLE214xA devices are high-performance, internally compensated operational amplifiers built using Texas Instruments complementary bipolar Excalibur process. The TLE214xA is a tighter offset voltage grade of the TLE214x. Both are pin-compatible upgrades to standard industry products.

The design incorporates an input stage that simultaneously achieves low audio-band noise of 10.5 nV//100-pF load is useful in fast actuator/positioning drivers. Under similar test conditions, settling time to 0.01% is 400 ns.

The devices are stable with capacitive loads up to 10 nF, although the 6-MHz bandwidth decreases to 1.8 MHz at this high loading level. As such, the TLE214x and TLE214xA are useful for low-droop sample-and-holds and direct buffering of long cables, including 4-mA to 20-mA current loops



	TLE2142
Number of Channels	2
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10)	4
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10)	44
Iq per channel(Max)(mA)	4.4
GBW(Typ)(MHz)	5.8
Slew Rate(Typ)(V/us)	45
VIO (25 deg C)(Max)(mV)	1.9
Offset Drift(Typ)(uV/C)	1.7
IIB(Max)(pA)	2000000
CMRR(Min)(dB)	85
Vn at 1kHz(Typ)(nV/rtHz)	10.5
Rating	Catalog
Pin/Package	8PDIP, 8SOIC
Operating Temperature Range(C)
Approx. Price (US$)	0.85 | 1ku

TLE2142 特性

• Low Noise
• 10 Hz...15 nV/Hz\
• 1 kHz...10.5 nV/Hz\
• 10000-pF Load Capability
• 20-mA Min Short-Circuit Output Current
• 27-V/us Min Slew Rate
• High Gain-Bandwidth Product...5.9 MHz
• Low VIO ...500 uV Max at 25°C
• Single or Split Supply...4 V to 44 V
• Fast Settling Time
• 340 ns to 0.1%
• 400 ns to 0.01%
• Saturation Recovery...150 ns
• Large Output Swing
• VCC– +0.1 V to VCC+ –1 V

TLE2142 芯片订购指南

器件	状态	温度	价格（美元）	封装 | 引脚	封装数量 | 封装载体	丝印标记
TLE2142CD	ACTIVE		1.05 | 1ku	SOIC (D) | 8	75 | TUBE
TLE2142CDG4	ACTIVE		1.05 | 1ku	SOIC (D) | 8	75 | TUBE
TLE2142CDR	ACTIVE		0.85 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
TLE2142CDRG4	ACTIVE		0.85 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
TLE2142CP	ACTIVE		1.05 | 1ku	PDIP (P) | 8	50 | TUBE
TLE2142CPE4	ACTIVE		1.05 | 1ku	PDIP (P) | 8	50 | TUBE
TLE2142ID	ACTIVE		1.15 | 1ku	SOIC (D) | 8	75 | TUBE
TLE2142IDG4	ACTIVE		1.15 | 1ku	SOIC (D) | 8	75 | TUBE
TLE2142IDR	ACTIVE		0.95 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
TLE2142IDRG4	ACTIVE		0.95 | 1ku	SOIC (D) | 8	2500 | LARGE T&R
TLE2142IP	ACTIVE		0.95 | 1ku	PDIP (P) | 8	50 | TUBE
TLE2142IPE4	ACTIVE		0.95 | 1ku	PDIP (P) | 8	50 | TUBE

TLE2142 质量与无铅数据

器件	环保计划*	铅/焊球涂层	MSL 等级/回流焊峰	环保信息与无铅 (Pb-free)	DPPM / MTBF / FIT 率
TLE2142CD	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2142CD	TLE2142CD
TLE2142CDG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2142CDG4	TLE2142CDG4
TLE2142CDR	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2142CDR	TLE2142CDR
TLE2142CDRG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2142CDRG4	TLE2142CDRG4
TLE2142CP	Pb-Free (RoHS)	CU NIPDAU	N/A for Pkg Type	TLE2142CP	TLE2142CP
TLE2142CPE4	Pb-Free (RoHS)	CU NIPDAU	N/A for Pkg Type	TLE2142CPE4	TLE2142CPE4
TLE2142ID	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2142ID	TLE2142ID
TLE2142IDG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2142IDG4	TLE2142IDG4
TLE2142IDR	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2142IDR	TLE2142IDR
TLE2142IDRG4	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLE2142IDRG4	TLE2142IDRG4
TLE2142IP	Pb-Free (RoHS)	CU NIPDAU	N/A for Pkg Type	TLE2142IP	TLE2142IP
TLE2142IPE4	Pb-Free (RoHS)	CU NIPDAU	N/A for Pkg Type	TLE2142IPE4	TLE2142IPE4

TLE2142 应用技术支持与电子电路设计开发资源下载

1. TLE2142 数据资料 dataSheet 下载.PDF
2. TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
3. 所选封装材料的热学和电学性质 (PDF 645 KB)
4. 高速数据转换 (PDF 1967 KB)
5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
6. PowerPADTM Thermally Enhanced Package (slma002g.HTM, 8 KB)
7. 运算放大器的单电源操作 (PDF 2174 KB)
8. Tuning in Amplifiers (PDF 44 KB)
9. Op Amp Performance Analysis (PDF 76 KB)
10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)