TLC272B LinCMOS 精密二路运算放大器
The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.
These devices use Texas Instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV).
| TLC272B | |
| Iq per channel(Max)(mA) | 1.6 |
| VIO (25 deg C)(Max)(mV) | 2 |
| CMRR(Min)(dB) | 65 |
| Vn at 1kHz(Typ)(nV/rtHz) | 25 |
| IIB(Max)(pA) | 60 |
| Slew Rate(Typ)(V/us) | 3.6 |
| GBW(Typ)(MHz) | 1.7 |
| Spec'd at Vs(V) | 5 |
| VIO (Full Range)(Max)(mV) | 3 |
| Vs(Min)(V) | 3 |
| Vs(Max)(V) | 16 |
| Pin/Package | 8PDIP, 8SO, 8SOIC |
| Open Loop Gain(Min)(dB) | 74 |
| Offset Drift(Typ)(uV/C) | 1.8 |
| Number of Channels | 2 |
| Approx. Price (US$) | 0.32 | 1ku |
| Operating Temperature Range(C) | -40 to 85,0 to 70 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 3 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 16 |
TLC272B 特性
- Trimmed Offset Voltage:
TLC277 . . . 500 uV Max at 25°C, VDD = 5 V - Input Offset Voltage Drift ...Typically 0.1 uV/Month, Including the First 30 Days
- Wide Range of Supply Voltages Over Specified Temperature Range:
0°C to 70°C ...3 V to 16 V
–40°C to 85°C ...4 V to 16 V
–55°C to 125°C ...4 V to 16 V - Single-Supply Operation
- Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)
- Low Noise ...Typically 25 nV/
Hz at f = 1 kHz
- Output Voltage Range Includes Negative Rail
- High Input impedance ...1012
Typ
- ESD-Protection Circuitry
- Small-Outline Package Option Also Available in Tape and Reel
- Designed-In Latch-Up Immunity
TLC272B 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TLC272BCD | ACTIVE | 0 to 70 | 0.39 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLC272BCDG4 | ACTIVE | 0 to 70 | 0.39 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLC272BCDR | ACTIVE | 0 to 70 | 0.32 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLC272BCDRG4 | ACTIVE | 0 to 70 | 0.32 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLC272BCP | ACTIVE | 0 to 70 | 0.39 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
| TLC272BCPE4 | ACTIVE | 0 to 70 | 0.39 | 1ku | PDIP (P) | 8 | 50 | TUBE |
TLC272B 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TLC272BCD | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC272BCD | TLC272BCD |
| TLC272BCDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC272BCDG4 | TLC272BCDG4 |
| TLC272BCDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC272BCDR | TLC272BCDR |
| TLC272BCDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC272BCDRG4 | TLC272BCDRG4 |
| TLC272BCP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC272BCP | TLC272BCP |
| TLC272BCPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC272BCPE4 | TLC272BCPE4 |
TLC272B 应用技术支持与电子电路设计开发资源下载
- TLC272B 数据资料 dataSheet 下载.PDF
- TI 德州仪标准线性放大器产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPADTM Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)