SN74CB3T16212 24 位 FET 总线交换器，具有 5V 容限电平转换器的 2.5V/3.3V 低电压总线开关
The SN74CB3T16212 is a high-speed TTL-compatible FET bus-exchange switch, with low ON-state resistance (ron), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks VCC. The SN74CB3T16212 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels (see Figure 1).
The SN74CB3T16212 operates as a 24-bit bus switch or as a 12-bit bus exchange that provides data exchanging between four signal ports. The select (S0, S1, S2) inputs control the data path of the bus-exchange switch. When the bus-exchange switch is ON, the A port is connected to the B port, allowing bidirectional data flow between ports
|
SN74CB3T16212 |
| ron(max)(ohms) |
8.5 |
| tpd max(ns) |
0.25 |
| Pin/Package |
56BGA MICROSTAR JUNIOR, 56TSSOP, 56TVSOP |
| Technology Family |
CB3T |
| Operating Temperature Range(°C) |
-40 to 85 |
| Approx. Price (US$) |
2.10 | 1ku |
SN74CB3T16212 特性
- Member of the Texas Instruments WidebusTM Family
- Output Voltage Translation Tracks VCC
- Supports Mixed-Mode Signal Operation on All Data I/O Ports
- 5-V Input Down to 3.3-V Output Level Shift With 3.3-V VCC
- 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V VCC
- 5-V-Tolerant I/Os With Device Powered Up or Powered Down
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low ON-State Resistance (ron) Characteristics (ron = 5 Typ)
- Low Input/Output Capacitance Minimizes Loading (Cio(OFF) = 9 pF Typ)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 70 uA Max)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
- Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 250 mA Per JESD 17
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Digital Applications: Level Translation, PCI Interface, USB Interface, Memory Interleaving, and Bus Isolation
SN74CB3T16212 芯片订购指南
SN74CB3T16212 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| 74CB3T16212DGGRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3T16212DGGRE4 |
74CB3T16212DGGRE4 |
| 74CB3T16212DGGRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3T16212DGGRG4 |
74CB3T16212DGGRG4 |
| 74CB3T16212DGVRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3T16212DGVRE4 |
74CB3T16212DGVRE4 |
| 74CB3T16212DGVRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3T16212DGVRG4 |
74CB3T16212DGVRG4 |
| SN74CB3T16212DGGR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CB3T16212DGGR |
SN74CB3T16212DGGR |
| SN74CB3T16212DGVR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CB3T16212DGVR |
SN74CB3T16212DGVR |
| SN74CB3T16212ZQLR |
Green (RoHS & no Sb/Br) |
SNAGCU |
Level-1-260C-UNLIM |
SN74CB3T16212ZQLR |
SN74CB3T16212ZQLR |
SN74CB3T16212 应用技术支持与电子电路设计开发资源下载
- SN74CB3T16212 数据资料 dataSheet 下载.PDF
- TI 德州仪器信号开关产品选型与价格 . xls
- Logic Guide 2009 (PDF 4263 KB)
- 防止模拟开关的额外功耗 (PDF 392 KB) (PDF 1305 KB)
- Understanding and Interpreting Standard-Logic Data Sheets (PDF 857 KB)
- TI IBIS File Creation, Validation, and Distribution Processes (PDF 380 KB)
- Implications of Slow or Floating CMOS Inputs (PDF 101 KB)
- CMOS Power Consumption and CPD Calculation (PDF 89 KB)
- Designing With Logic (PDF 186 KB)
- Live Insertion (PDF 150 KB)
- Input and Output Characteristics of Digital Integrated Circuits (PDF 1708 KB)
- Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc (PDF 43 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)