SN74ABT543A 具有三态输出的八路寄存收发器
              
SN74ABT543A 描述
       The 'ABT543A octal transceivers contain two sets of D-type latches for   temporary storage of data flowing in either direction. Separate latch-enable   (LEAB\ or LEBA\) and output-enable (OEAB\ or OEBA\) inputs are provided for each   register to permit independent control in either direction of data flow. 
              The A-to-B enable (CEAB\) input must be low to enter data from A or to output   data from B. If CEAB\ is low and LEAB\ is low, the A-to-B latches are   transparent; a subsequent low-to-high transition of LEAB\ puts the A latches in   the storage mode. With CEAB\ and OEAB\ both low, the 3-state B outputs are   active and reflect the data present at the output of the A latches. Data flow   from B to A is similar, but requires using the CEBA\, LEBA\, and OEBA\ inputs
              
                
                   | 
                  SN74ABT543A | 
                
                
                  | Voltage Nodes(V) | 
                  5   | 
                
                
                  | Vcc range(V) | 
                  4.5 to 5.5   | 
                
                
                  | Input Level | 
                  TTL   | 
                
                
                  | Output Level | 
                  TTL   | 
                
                
                  | Output Drive(mA) | 
                  -32/64   | 
                
                
                  | No. of Outputs | 
                  8   | 
                
                
                  | Logic | 
                  True   | 
                
                
                  | Static Current | 
                  15.12   | 
                
                
                  | th(ns) | 
                  0.5   | 
                
                
                  | tpd max(ns) | 
                  6.2   | 
                
                
                  | tsu(ns) | 
                  3.5   | 
                
                
                  | Technology Family | 
                  ABT   | 
                
                
                  | Rating | 
                  Catalog | 
                
              
              SN74ABT543A 特性
              
              
                - State-of-the-Art EPIC-II BTM BiCMOS   Design Significantly Reduces Power Dissipation   
                
 - ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V   Using Machine Model (C = 200 pF, R = 0)   
                
 - Typical VOLP (Output Ground Bounce) < 1 V at   VCC = 5 V, TA = 25°C   
                
 - High-Drive Outputs (-32-mA IOH, 64-mA   IOL)   
                
 - Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline   (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK),   Ceramic Flat (W) Package, and Plastic (NT) and Ceramic (JT) DIPs
 
              
              SN74ABT543A 芯片订购指南
              
                
                  | 器件 | 
                  状态 | 
                  温度 | 
                  价格(美元) | 
                  封装 | 引脚 | 
                  封装数量 | 封装载体 | 
                  丝印标记 | 
                
                
                  | SN74ABT543ADW | 
                  ACTIVE | 
                  -40 to 85 | 
                  4.35 | 1ku | 
                  SOIC (DW) | 24 | 
                  25 | TUBE | 
                  ABT543A | 
                
                
                  | SN74ABT543ADWE4 | 
                  ACTIVE | 
                  -40 to 85 | 
                  4.35 | 1ku | 
                  SOIC (DW) | 24 | 
                  25 | TUBE | 
                  ABT543A | 
                
                
                  | SN74ABT543ADWG4 | 
                  ACTIVE | 
                  -40 to 85 | 
                  4.35 | 1ku | 
                  SOIC (DW) | 24 | 
                  25 | TUBE | 
                  ABT543A | 
                
              
              SN74ABT543A 质量与无铅数据
              
                
                  | 器件 | 
                  环保计划* | 
                  铅/焊球涂层 | 
                  MSL 等级/回流焊峰 | 
                  环保信息与无铅 (Pb-free) | 
                  DPPM / MTBF / FIT 率 | 
                
                
                  | SN74ABT543ADW | 
                  Green (RoHS & no Sb/Br)  | 
                  CU NIPDAU  | 
                  Level-1-260C-UNLIM | 
                  SN74ABT543ADW | 
                  SN74ABT543ADW | 
                
                
                  | SN74ABT543ADWE4 | 
                  Green (RoHS & no Sb/Br)  | 
                  CU NIPDAU  | 
                  Level-1-260C-UNLIM | 
                  SN74ABT543ADWE4 | 
                  SN74ABT543ADWE4 | 
                
                
                  | SN74ABT543ADWG4 | 
                  Green (RoHS & no Sb/Br)  | 
                  CU NIPDAU  | 
                  Level-1-260C-UNLIM | 
                  SN74ABT543ADWG4 | 
                  SN74ABT543ADWG4 | 
                
              
              SN74ABT543A 应用技术支持与电子电路设计开发资源下载
              
                - SN74ABT543A 数据资料   dataSheet 下载.PDF 
 
                - TI 德州仪器缓冲器、驱动器/收发器产品选型与价格 . xls 
 
                - CMOS 非缓冲反向器在振荡器电路中的使用 (PDF 951 KB)
 
                - Semiconductor Packing Methodology (PDF 3005 KB)
 
                - 逻辑产品选择指南 2006/2007 (修订版 Z)(4462KB)
 
                - 标准线性和逻辑产品 5 分钟指南 (786KB)
 
                - 了解和解释标准逻辑数据表
 
                - LOGIC Pocket Data Book  (PDF  6001 KB)
 
                - HiRel Unitrode Power Management Brochure  (PDF  206 KB)
 
                - Logic Cross-Reference (PDF  2938 KB)