| CSD16322Q5 | CSD16323Q3 | |
| VDS(V) | 25 | 25 | 
| VGS(V) | 10 | 10 | 
| VGSTH(V) | 1.1 | 1.1 | 
| RDS(on) at VGS=4.5V(mOhm) | 4.6 | 4.4 | 
| QGD(nC) | 1.3 | 1.1 | 
| QGS(nC) | 2.4 | 1.8 | 
| QG(nC) | 6.8 | 6.2 | 
| Operating Temperature Range(°C) | -50 to 150 | -55 to 150 | 
| Pin/Package | 8SON | 8SON | 
The NexFETTM power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
| 器件 | 状态 | 温度 (oC) | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 | 
| CSD16323Q3 | ACTIVE | -55 to 150 | 0.36 | 1ku | SON (DQH) | 6 | 2500 | LARGE T&R | 
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 | 
| CSD16323Q3 | Pb-Free (RoHS Exempt) | CU SN | Level-1-260C-UNLIM | CSD16323Q3 | CSD16323Q3 |