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TXS0104E 用于漏极开路应用的 4 位双向电压电平转换器

This 4-bit noninverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.65 V to 3.6 V. VCCA must be less than or equal to VCCB. The B port is designed to track VCCB. VCCB accepts any supply voltage from 2.3 V to 5.5 V. This allows for low-voltage bidirectional translation between any of the 1.8-V, 2.5-V, 3.3-V, and 5-V voltage nodes.

When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.

The TXS0104E is designed so that the OE input circuit is supplied by VCCA.

To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver

TXS0104E
Vcc range(V) 1.65 to 3.6,2.3 to 5.5
Pin/Package 12BGA MICROSTAR JUNIOR, 12DSBGA, 14SOIC, 14TSSOP, 14VQFN
Operating Temperature Range(°C) -40 to 85
Approx. Price (US$) 0.65 | 1ku
Rating Catalog
TXS0104E 特性
TXS0104E 芯片订购指南
器件 状态 温度 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
TXS0104ED ACTIVE -40 to 85 0.70 | 1ku SOIC (D) | 14 50 | TUBE  
TXS0104EDG4 ACTIVE -40 to 85 0.70 | 1ku SOIC (D) | 14 50 | TUBE  
TXS0104EDR ACTIVE -40 to 85 0.55 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TXS0104EDRG4 ACTIVE -40 to 85 0.55 | 1ku SOIC (D) | 14 2500 | LARGE T&R  
TXS0104EGXUR ACTIVE -40 to 85 0.55 | 1ku BGA MICROSTAR JUNIOR (GXU) | 12 2500 | LARGE T&R  
TXS0104EPWR ACTIVE -40 to 85 0.55 | 1ku TSSOP (PW) | 14 2000 | LARGE T&R  
TXS0104EPWRG4 ACTIVE -40 to 85 0.55 | 1ku TSSOP (PW) | 14 2000 | LARGE T&R  
TXS0104ERGYR ACTIVE -40 to 85 0.55 | 1ku VQFN (RGY) | 14 3000 | LARGE T&R  
TXS0104ERGYRG4 ACTIVE -40 to 85 0.55 | 1ku VQFN (RGY) | 14 3000 | LARGE T&R  
TXS0104ERUTR ACTIVE -40 to 85 0.55 | 1ku UQFN (RUT) | 12 3000 | LARGE T&R  
TXS0104EYZTR ACTIVE -40 to 85 0.60 | 1ku DSBGA (YZT) | 12 3000 | LARGE T&R  
TXS0104EZXUR ACTIVE -40 to 85 0.55 | 1ku BGA MICROSTAR JUNIOR (ZXU) | 12 2500 | LARGE T&R  
TXS0104E 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
TXS0104ED Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TXS0104ED TXS0104ED
TXS0104EDG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TXS0104EDG4 TXS0104EDG4
TXS0104EDR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TXS0104EDR TXS0104EDR
TXS0104EDRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TXS0104EDRG4 TXS0104EDRG4
TXS0104EGXUR TBD SNPB Level-1-240C-UNLIM TXS0104EGXUR TXS0104EGXUR
TXS0104EPWR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TXS0104EPWR TXS0104EPWR
TXS0104EPWRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TXS0104EPWRG4 TXS0104EPWRG4
TXS0104ERGYR Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TXS0104ERGYR TXS0104ERGYR
TXS0104ERGYRG4 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TXS0104ERGYRG4 TXS0104ERGYRG4
TXS0104ERUTR Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TXS0104ERUTR TXS0104ERUTR
TXS0104EYZTR Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM TXS0104EYZTR TXS0104EYZTR
TXS0104EZXUR Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM TXS0104EZXUR TXS0104EZXUR
TXS0104E 应用技术支持与电子电路设计开发资源下载
  1. TXS0104E 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器电压电平转换产品选型与价格 . xls
  3. Shelf-Life Evaluation of Lead-Free Component Finishes (PDF 1305 KB)
  4. Understanding and Interpreting Standard-Logic Data Sheets (PDF 857 KB)
  5. TI IBIS File Creation, Validation, and Distribution Processes (PDF 380 KB)
  6. Implications of Slow or Floating CMOS Inputs (PDF 101 KB)
  7. CMOS Power Consumption and CPD Calculation (PDF 89 KB)
  8. Designing With Logic (PDF 186 KB)
  9. Live Insertion (PDF 150 KB)
  10. Input and Output Characteristics of Digital Integrated Circuits (PDF 1708 KB)
  11. Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc (PDF 43 KB)
  12. HiRel Unitrode Power Management Brochure (PDF 206 KB)
  13. LOGIC Pocket Data Book (PDF 6001 KB)
  14. HiRel Unitrode Power Management Brochure (PDF 206 KB)
  15. Logic Cross-Reference (PDF 2938 KB)