TS3USB221E 具有 ESD 保护的高速 USB 2.0 (480Mbps) 1:2 多路复用器/多路解复用器开关
The TS3USB221E is a high-bandwidth switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1 GHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480 Mbps).
The TS3USB221E integrates ESD protection cells on all pins, is available in a SON package (3 mm × 3 mm) as well as in a tiny uQFN package (2 mm × 1.5 mm) and is characterized over the free air temperature range from –40°C to 85°C
|
TS3USB221E |
| Number of Channels |
2 |
| ESD HBM(kV) |
+/-7 |
| Architecture |
1:2 Mux/Demux |
| ron(max)(ohms) |
6 |
| RON Mis-match(Max)(Ohms) |
0.2 |
| RON Flatness(Max)(Ohms) |
1 |
| Bandwidth(MHz) |
1200 |
| ICC(uA) |
|
| IL OFF(Max)(nA) |
2 |
| Charge Injection(Max)(pC) |
|
| ON Time(Max)(ns) |
5 |
| OFF Time(Max)(ns) |
30 |
| tpd max(ns) |
0.25 |
| Vcc range(V) |
2.3 to 3.6 |
| Pin/Package |
10SON, 10UQFN |
TS3USB221E 特性
- VCC Operation of 2.5 V to 3.3 V
- Switch I/Os Accept Signals Up to 5.5 V
- 1.8-V Compatible Control-Pin Inputs
- Low-Power Mode When OE Is Disabled (1 uA)
- rON = 6
Maximum
rON = 0.2 Typical
- Cio(on) = 7 pF Maximum
- Low Power Consumption (30 uA Maximum)
- ESD Performance Tested Per JESD 22
- 7000-V Human-Body Model
(A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- ESD Performance I/O Port to GND
- 12-kV Human Body Model (A114-B, Class II)
- ±7-kV Contact Discharge (IEC 61000-4-2)
- High Bandwidth (1 GHz Typical)
- APPLICATIONS
- Routes Signals for USB 1.0, 1.1, and 2.0
TS3USB221E 芯片订购指南
| 器件 |
状态 |
温度 |
价格 |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| TS3USB221EDRCR |
ACTIVE |
-40 to 85 |
0.60 | 1ku |
SON (DRC) | 10 |
3000 | LARGE T&R |
|
| TS3USB221ERSER |
ACTIVE |
-40 to 85 |
0.60 | 1ku |
UQFN (RSE) | 10 |
3000 | LARGE T&R |
|
TS3USB221E 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| TS3USB221EDRCR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-2-260C-1 YEAR |
TS3USB221EDRCR |
TS3USB221EDRCR |
| TS3USB221ERSER |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TS3USB221ERSER |
TS3USB221ERSER |
TS3USB221E 应用技术支持与电子电路设计开发资源下载
- TS3USB221E 数据资料 dataSheet 下载.PDF
- TI 德州仪器USB选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 使用数字隔离器设计隔离式 I2C 总线接口 (zhct119.PDF, 339 KB)
- 高性能SERDES及其在CPRI 接口的应用分析 (zhca076.HTM, 8 KB)
- 1Q 2011 Issue Analog Applications Journal (slyt399.PDF, 964 KB)
- 接口选择指南 (Rev. D) (PDF 2994 KB)
- Signaling Rate vs. Distance for Differential Buffers (PDF 420 KB)
- Q1 2009 Issue Analog Applications Journal (slyt319.PDF, 1.39 MB)
- 无铅组件涂层的保存期评估 (PDF 1305 KB)
- Analog Signal Chain Guide (8.62 MB)
- Industrial Interface IC Solutions (101 KB)
TS3USB221E 工具和软件