
| TS3DV416 | |
| Voltage Node(V) | 4.6 |
| Vcc min(V) | -0.5 |
| Vcc max(V) | 4.6 |
| ron(max)(ohms) | 8 |
| tpd max(ns) | 0.04 |
| 器件 | 状态 | 温度 | 价格 | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TS3DV416DGGR | ACTIVE | -40 to 85 | 0.90 | 1ku | TSSOP (DGG) | 48 | 2000 | LARGE T&R | |
| TS3DV416DGGRE4 | ACTIVE | -40 to 85 | 0.90 | 1ku | TSSOP (DGG) | 48 | 2000 | LARGE T&R | |
| TS3DV416DGGRG4 | ACTIVE | -40 to 85 | 0.90 | 1ku | TSSOP (DGG) | 48 | 2000 | LARGE T&R |
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TS3DV416DGGR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS3DV416DGGR | TS3DV416DGGR |
| TS3DV416DGGRE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS3DV416DGGRE4 | TS3DV416DGGRE4 |
| TS3DV416DGGRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS3DV416DGGRG4 | TS3DV416DGGRG4 |