TS3DS26227 具有输入逻辑转换的高带宽双 SPDT 差动信号开关
The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from 2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal distortion during the transferring of a signal from one path to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable applications.
The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals
|
TS3DS26227 |
Configuration |
2 X SPDT |
ron(max)(ohms) |
6 |
IL OFF(Max)(nA) |
N/A |
OFF Time(Max)(ns) |
5 |
ON Time(Max)(ns) |
11.5 |
Operating Temperature Range(°C) |
-40 to 85 |
Pin/Package |
12DSBGA |
Approx. Price (US$) |
0.55 | 1ku |
VCC(Min)(V) |
2.3 |
VCC(Max)(V) |
3.6 |
Voltage Nodes(V) |
2.5, 3.0, 3.3 |
RON Flatness(Max)(Ohms) |
4 |
Technology Family |
TS |
ESD Rating(kV) |
2kV HBM |
Bandwidth(MHz) |
800 |
Charge Injection(Max)(pC) |
5.5 |
RON Mis-match(Max)(Ohms) |
0.2 |
Voltage Node(V) |
2.5, 3.0, 3.3 |
Vcc max(V) |
3.6 |
Vcc min(V) |
2.3 |
Number of Channels |
2 |
Vcc range(V) |
2.3 to 5.5 |
ICC(uA) |
0.5 |
Rating |
Catalog |
TS3DS26227 特性
- High-Bandwidth Data Paths – Up to 800 MHz
- Specified Break-Before-Make Switching
- Control Inputs Reference to VIO
- Low Charge Injection
- Excellent ON-State Resistance Matching
- Low Total Harmonic Distortion (THD)
- 2.3-V to 3.6-V Power Supply (V+)
- 1.65-V to 1.95-V Logic Supply (VIO)
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 4000-V Human-Body Model
(A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- 200-V Machine Model (A115-A)
- APPLICATIONS
- Cell Phones
- PDAs
- Portable Instrumentation
- Low-Voltage Differential Signal Routing
- Mobile Industry Processor Interface (MIPI) Signal Routing
TS3DS26227 芯片订购指南
器件 |
状态 |
温度 |
价格 |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
TS3DS26227YZTR |
ACTIVE |
-40 to 85 |
0.55 | 1ku |
DSBGA (YZG) | 12 |
3000 | LARGE T&R |
|
TS3DS26227 质量与无铅数据
器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
TS3DS26227YZTR |
Green (RoHS & no Sb/Br) |
SNAGCU |
Level-1-260C-UNLIM |
TS3DS26227YZTR |
TS3DS26227YZTR |
TS3DS26227 应用技术支持与电子电路设计开发资源下载
- TS3DS26227 数据资料 dataSheet 下载.PDF
- TI 德州仪器信号开关产品选型与价格 . xls
- Logic Guide 2009 (PDF 4263 KB)
- 防止模拟开关的额外功耗 (PDF 392 KB) (PDF 1305 KB)
- Understanding and Interpreting Standard-Logic Data Sheets (PDF 857 KB)
- TI IBIS File Creation, Validation, and Distribution Processes (PDF 380 KB)
- Implications of Slow or Floating CMOS Inputs (PDF 101 KB)
- CMOS Power Consumption and CPD Calculation (PDF 89 KB)
- Designing With Logic (PDF 186 KB)
- Live Insertion (PDF 150 KB)
- Input and Output Characteristics of Digital Integrated Circuits (PDF 1708 KB)
- Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc (PDF 43 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)