TS321 低功耗单路运算放大器
The TS321 is a bipolar operational amplifier for cost-sensitive applications in which space savings are important.
| TS321 | |
| Iq per channel(Max)(mA) | 1 |
| VIO (25 deg C)(Max)(mV) | 4 |
| CMRR(Min)(dB) | 65 |
| Vn at 1kHz(Typ)(nV/rtHz) | 50 |
| IIB(Max)(pA) | 200000 |
| Slew Rate(Typ)(V/us) | 0.4 |
| GBW(Typ)(MHz) | 0.8 |
| Spec'd at Vs(V) | 5 |
| VIO (Full Range)(Max)(mV) | 5 |
| Vs(Min)(V) | 3 |
| Vs(Max)(V) | 30 |
| Pin/Package | 8SOIC, 5SOT-23 |
| Vio(Max)(mV) | 5 |
| Supply Voltage 5(V) | Yes |
| Open Loop Gain(Min)(dB) | 88 |
| Offset Voltage (+/-)(Max)(mV) | 5 |
| Number of Channels | 1 |
| Approx. Price (US$) | 0.30 | 1ku |
| Operating Temperature Range(C) | -40 to 125 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 3 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 30 |
TS321 特性
- Wide Power-Supply Range
- Single Supply . . . 3 V to 30 V
- Dual Supply . . . ±1.5 V to ±15 V
- Large Output Voltage Swing . . . 0 V to 3.5 V (Min) (VCC = 5 V)
- Low Supply Current . . . 500 uA (Typ)
- Low Input Bias Current . . . 20 nA (Typ)
- Stable With High Capacitive Loads
TS321 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TS321ID | ACTIVE | -40 to 125 | 0.36 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TS321IDBVR | ACTIVE | -40 to 125 | 0.30 | 1ku | SOT-23 (DBV) | 5 | 3000 | LARGE T&R | |
| TS321IDBVRE4 | ACTIVE | -40 to 125 | 0.30 | 1ku | SOT-23 (DBV) | 5 | 3000 | LARGE T&R | |
| TS321IDBVRG4 | ACTIVE | -40 to 125 | 0.30 | 1ku | SOT-23 (DBV) | 5 | 3000 | LARGE T&R | |
| TS321IDBVT | ACTIVE | -40 to 125 | 0.55 | 1ku | SOT-23 (DBV) | 5 | 250 | SMALL T&R | |
| TS321IDBVTE4 | ACTIVE | -40 to 125 | 0.55 | 1ku | SOT-23 (DBV) | 5 | 250 | SMALL T&R | |
| TS321IDBVTG4 | ACTIVE | -40 to 125 | 0.55 | 1ku | SOT-23 (DBV) | 5 | 250 | SMALL T&R | |
| TS321IDE4 | ACTIVE | -40 to 125 | 0.36 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TS321IDG4 | ACTIVE | -40 to 125 | 0.36 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TS321IDR | ACTIVE | -40 to 125 | 0.30 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TS321IDRE4 | ACTIVE | -40 to 125 | 0.30 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TS321IDRG4 | ACTIVE | -40 to 125 | 0.30 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R |
TS321 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TS321ID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321ID | TS321ID |
| TS321IDBVR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDBVR | TS321IDBVR |
| TS321IDBVRE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDBVRE4 | TS321IDBVRE4 |
| TS321IDBVRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDBVRG4 | TS321IDBVRG4 |
| TS321IDBVT | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDBVT | TS321IDBVT |
| TS321IDBVTE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDBVTE4 | TS321IDBVTE4 |
| TS321IDBVTG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDBVTG4 | TS321IDBVTG4 |
| TS321IDE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDE4 | TS321IDE4 |
| TS321IDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDG4 | TS321IDG4 |
| TS321IDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDR | TS321IDR |
| TS321IDRE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDRE4 | TS321IDRE4 |
| TS321IDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TS321IDRG4 | TS321IDRG4 |
TS321 应用技术支持与电子电路设计开发资源下载
- TS321 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
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