The TPD2EUSB30, TPD2EUSB30A, and TPD4EUSB30 provide 2 and 4 channel ESD and surge protection solutions in space saving, flow-through packages. These devices have been designed to protect sensitive components which are connected to ultra high-speed data and transmission lines. These devices also offer 5 A (8/20 us) peak pulse current ratings per IEC 61000-4-5 (lightning) specification.
The monolithic silicon technology allows matching between the differential signal pairs. The differential 0.05-pF capacitance ensures that the signal distortion due to added ESD clamp remains minimal at high-speed differential data transmission.
The TPD2EUSB30A offers low 4.5V dc break-down voltage. The low capacitance and break-down voltage, coupled low dynamic resistance, make the TPD2EUSB30A a superior ESD/ surge protection device for high-speed differential IOs based off ultra-low voltage process nodes
TPD2EUSB30 | TPD2EUSB30A | TPD4EUSB30 | |
Number of Channels | 2 | 2 | 4 |
IEC 61000-4-2 Contact(+/- kV) | +/- 8 | +/- 8 | +/-8 |
IEC 61000-4-2 Air-Gap(+/- kV) | +/- 8 | +/- 8 | +/-8 |
IO Capacitance(Typ)(pF) | 0.7 | 0.7 | 0.8 |
Differential Capacitance(pF) | 0.01 | 0.05 | 0.05 |
Breakdown Voltage(Min)(V) | 9 | 4.5 | 8 |
IO Leakage Current(nA) | 10 | 10 | 10 |
Operating Temperature Range(°C) | -40 to 85 | -40 to 85 | -40 to 85 |
器件 | 状态 | 温度 | 价格 | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
TPD2EUSB30DRTR | ACTIVE | -40 to 85 | 0.15 | 1ku | SOT (DRT) | 3 | 3000 | LARGE T&R |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
TPD2EUSB30DRTR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TPD2EUSB30DRTR | TPD2EUSB30DRTR |