TLE2161 JFET 输入（高输出驱动）低功耗解补偿运算放大器
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled
| TLE2161 | |
| Number of Channels | 1 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 7 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 36 |
| Iq per channel(Max)(mA) | 0.325 |
| GBW(Typ)(MHz) | 5.8 |
| Slew Rate(Typ)(V/us) | 10 |
| VIO (25 deg C)(Max)(mV) | 3.1 |
| Offset Drift(Typ)(uV/C) | 6 |
| IIB(Max)(pA) | 2000 |
| CMRR(Min)(dB) | 65 |
| Vn at 1kHz(Typ)(nV/rtHz) | 43 |
| Pin/Package | Catalog |
| Rating | 8SOIC |
| Operating Temperature Range(C) | 0 to 70 |
| Approx. Price (US$) | 0.70 | 1ku |
TLE2161 特性
- Excellent Output Drive Capability
VO = ± 2.5 V Min at RL = 100
,
VCC± = ± 5 V
VO = ± 12.5 V Min at RL = 600,
VCC± = ± 15 V - Low Supply Current...280 uA Typ
- Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/us Typ Gain-Bandwidth Product = 6.5 MHz Typ
- Wide Operating Supply Voltage Range VCC ± = ± 3.5 V to ± 18 V
- High Open-Loop Gain...280 V/mV Typ
- Low Offset Voltage...500 uV Max
- Low Offset Voltage Drift With Time 0.04 uV/Month Typ
- Low Input Bias Current...5 pA Typ
TLE2161 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TLE2161CD | ACTIVE | 0 to 70 | 0.70 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLE2161CDG4 | ACTIVE | 0 to 70 | 0.70 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLE2161ID | ACTIVE | 0.90 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLE2161IDG4 | ACTIVE | 0.90 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLE2161IDR | ACTIVE | 0.80 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | ||
| TLE2161IDRG4 | ACTIVE | 0.80 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R |
TLE2161 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TLE2161CD | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2161CD | TLE2161CD |
| TLE2161CDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2161CDG4 | TLE2161CDG4 |
| TLE2161ID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2161ID | TLE2161ID |
| TLE2161IDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2161IDG4 | TLE2161IDG4 |
| TLE2161IDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2161IDR | TLE2161IDR |
| TLE2161IDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2161IDRG4 | TLE2161IDRG4 |
TLE2161 应用技术支持与电子电路设计开发资源下载
- TLE2161 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
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