TLE2027 低噪声精密运算放大器
The TLE20x7 and TLE20x7A contain innovative circuit design expertise and high-quality process control techniques to produce a level of ac performance and dc precision previously unavailable in single operational amplifiers. Manufactured using Texas Instruments state-of-the-art Excalibur process, these devices allow upgrades to systems that use lower-precision devices.
In the area of dc precision, the TLE20x7 and TLE20x7A offer maximum offset voltages of 100 uV and 25 uV, respectively, common-mode rejection ratio of 131 dB (typ), supply voltage rejection ratio of 144 dB (typ), and dc gain of 45 V/uV (typ).
The ac performance of the TLE2027 and TLE2037 is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55° of phase margin, and noise voltage specifications of 3
| TLE2027 | |
| Number of Channels | 1 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 8 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 38 |
| Iq per channel(Max)(mA) | 5.3 |
| GBW(Typ)(MHz) | 13 |
| Slew Rate(Typ)(V/us) | 2.8 |
| VIO (25 deg C)(Max)(mV) | 0.1 |
| Offset Drift(Typ)(uV/C) | 0.4 |
| IIB(Max)(pA) | 90000 |
| CMRR(Min)(dB) | 100 |
| Vn at 1kHz(Typ)(nV/rtHz) | 2.5 |
| Rating | Catalog |
| Pin/Package | 8SOIC |
| Approx. Price (US$) | 0.90 | 1ku |
TLE2027 特性
- Outstanding Combination of dc Precision and AC Performance:
- Unity-Gain Bandwidth . . . 15 MHz Typ
- Vn . . . . .
- 3.3 nV/
Hz at f = 10 Hz Typ,
- 2.5 nV/Hz at f = 1 kHz Typ
- 3.3 nV/
- VIO . . . . 25 uV Max
- AVD . . . . 45 V/uV Typ With RL = 2 k
,
- 19 V/uV Typ With RL = 600
- Available in Standard-Pinout Small-Outline Package
- Output Features Saturation Recovery Circuitry
- Macromodels and Statistical information
TLE2027 芯片订购指南
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TLE2027CD | ACTIVE | 1.05 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLE2027CDG4 | ACTIVE | 1.05 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLE2027CDR | ACTIVE | 0.90 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | ||
| TLE2027CDRG4 | ACTIVE | 0.90 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | ||
| TLE2027ID | ACTIVE | 1.15 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLE2027IDG4 | ACTIVE | 1.15 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLE2027IDR | ACTIVE | 0.95 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | ||
| TLE2027IDRG4 | ACTIVE | 0.95 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R |
TLE2027 质量与无铅数据
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TLE2027CD | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2027CD | TLE2027CD |
| TLE2027CDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2027CDG4 | TLE2027CDG4 |
| TLE2027CDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2027CDR | TLE2027CDR |
| TLE2027CDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2027CDRG4 | TLE2027CDRG4 |
| TLE2027ID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2027ID | TLE2027ID |
| TLE2027IDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2027IDG4 | TLE2027IDG4 |
| TLE2027IDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2027IDR | TLE2027IDR |
| TLE2027IDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLE2027IDRG4 | TLE2027IDRG4 |
TLE2027 应用技术支持与电子电路设计开发资源下载
- TLE2027 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
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- 运算放大器的单电源操作 (PDF 2174 KB)
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- Op Amp Performance Analysis (PDF 76 KB)
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- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)