TLC372-EP 增强型产品 Lincmos 双路差动比较器

This device is fabricated using LinCMOSTM technology and consists of two independent voltage comparators, each designed to operate from a single power supply. Operation from dual supplies is also possible if the difference between the two supplies is 4 V to 18 V. Each device features extremely high input impedance (typically greater than 1012), allowing direct interfacing with high-impedance sources. The outputs are n-channel open-drain configurations and can be connected to achieve positive-logic wired-AND relationships.

The TLC372 has internal electrostatic discharge (ESD) protection circuits and has been classified with a 2000-V ESD rating using human-body-model (HBM) testing. However, care should be exercised in handling this device as exposure to ESD may result in a degradation of the device parametric performance.

The TLC372 is characterized for operation from -55°C to 125°C

	TLC372-EP
Number of Channels	2
Iq per channel (Max) (mA)	0.15
Output Current (Min) (mA)	6
tRESP Low - to - High (us)	0.2
Output Type	Open Collector,Open Drain
VIO (25 deg C) (Max) (mV)	5
Pin/Package	8SOIC
VICR (Min) (V)	0
VICR (Max) (V)	14.5
Vs (Min) (V)	4
Vs (Max) (V)	16
Operating Temperature Range (C)	-55 to 125
Rating	HiRel Enhanced Produc

TLC372-EP 特性

• Controlled Baseline
  • One Assembly/Test Site, One Fabrication Site
• Extended Temperature Performance of -55°C to 125°C
• Enhanced Diminishing Manufacturing Sources (DMS) Support
• Enhanced Product Change Notification
• Qualification Pedigree(1)
• ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 100 V Using Machine Model (C = 200 pF, R = 0)
• Single or Dual-Supply Operation
• Wide Range of Supply Voltages . . .4 V to 18 V
• Very Low Supply Current Drain . . .150 uA Typ at 5 V
• Fast Response Time . . . 200 ns Typ for TTL-Level Input Step
• Built-in ESD Protection
• High Input Impedance . . . 1012 Typ
• Extremely Low Input Bias Current. . .5 pA Typ
• Ultrastable Low Input Offset Voltage
• Input Offset Voltage Change at Worst-Case Input Conditions Typically 0.23 uV/Month, Including the First 30 Days
• Common-Mode Input Voltage Range Includes Ground
• Output Compatible With TTL, MOS, and CMOS
• Pin-Compatible With LM393

TLC372-EP 芯片订购指南

器件	状态	温度	价格	封装 | 引脚	封装数量 | 封装载体	丝印标记
TLC372MDREP	ACTIVE	-55 to 125		SOIC (D) | 8
V62/06675-01XE	ACTIVE	-55 to 125		SOIC (D) | 8

TLC372-EP 质量与无铅数据

器件	环保计划*	铅/焊球涂层	MSL 等级/回流焊峰	环保信息与无铅 (Pb-free)	DPPM / MTBF / FIT 率
TLC372MDREP	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	TLC372MDREP	TLC372MDREP
V62/06675-01XE	Green (RoHS & no Sb/Br)	CU NIPDAU	Level-1-260C-UNLIM	V62/06675-01XE	V62/06675-01XE

TLC372-EP 应用技术支持与电子电路设计开发资源下载

1. TLC372-EP 数据资料 dataSheet 下载.PDF
2. TI 德州仪器仪Comparator 比较器产品选型与价格 . xls
3. 所选封装材料的热学和电学性质 (PDF 645 KB)
4. 高速数据转换 (PDF 1967 KB)
5. 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
6. PowerPADTM Thermally Enhanced Package (slma002g.HTM, 8 KB)
7. 运算放大器的单电源操作 (PDF 2174 KB)
8. Tuning in Amplifiers (PDF 44 KB)
9. Op Amp Performance Analysis (PDF 76 KB)
10. An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
11. Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
12. Operational Amplifier Macromodels: A Comparison (PDF 59 KB)