The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.
These devices use Texas Instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and high slew rates make these cost-effective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 uV).
| TLC277 | |
| Number of Channels | 2 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 3 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 16 |
| Iq per channel(Max)(mA) | 1.6 |
| GBW(Typ)(MHz) | 1.7 |
| Slew Rate(Typ)(V/us) | 3.6 |
| VIO (25 deg C)(Max)(mV) | 0.5 |
| Offset Drift(Typ)(uV/C) | 1.8 |
| IIB(Max)(pA) | 600 |
| CMRR(Min)(dB) | 65 |
| Vn at 1kHz(Typ)(nV/rtHz) | 25 |
| Rating | Military |
| Pin/Package | 8PDIP, 8SO, 8SOIC |
| Approx. Price (US$) | 0.75 | 1ku |
Hz at f = 1 kHz
| 器件 | 状态 | 温度 | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| TLC277CD | ACTIVE | 0.90 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLC277CDG4 | ACTIVE | 0.90 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLC277CDR | ACTIVE | 0.75 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | ||
| TLC277CDRG4 | ACTIVE | 0.75 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | ||
| TLC277CP | ACTIVE | 0.75 | 1ku | PDIP (P) | 8 | 50 | TUBE | ||
| TLC277CPE4 | ACTIVE | 0.75 | 1ku | PDIP (P) | 8 | 50 | TUBE | ||
| TLC277CPSR | ACTIVE | 0.75 | 1ku | SO (PS) | 8 | 2000 | LARGE T&R | ||
| TLC277CPSRG4 | ACTIVE | 0.75 | 1ku | SO (PS) | 8 | 2000 | LARGE T&R | ||
| TLC277ID | ACTIVE | 0.95 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLC277IDG4 | ACTIVE | 0.95 | 1ku | SOIC (D) | 8 | 75 | TUBE | ||
| TLC277IDR | ACTIVE | 0.80 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | ||
| TLC277IDRG4 | ACTIVE | 0.80 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | ||
| TLC277IP | ACTIVE | 0.80 | 1ku | PDIP (P) | 8 | 50 | TUBE | ||
| TLC277IPE4 | ACTIVE | 0.80 | 1ku | PDIP (P) | 8 | 50 | TUBE |
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| TLC277CD | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277CD | TLC277CD |
| TLC277CDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277CDG4 | TLC277CDG4 |
| TLC277CDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277CDR | TLC277CDR |
| TLC277CDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277CDRG4 | TLC277CDRG4 |
| TLC277CP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC277CP | TLC277CP |
| TLC277CPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC277CPE4 | TLC277CPE4 |
| TLC277CPSR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277CPSR | TLC277CPSR |
| TLC277CPSRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277CPSRG4 | TLC277CPSRG4 |
| TLC277ID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277ID | TLC277ID |
| TLC277IDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277IDG4 | TLC277IDG4 |
| TLC277IDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277IDR | TLC277IDR |
| TLC277IDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC277IDRG4 | TLC277IDRG4 |
| TLC277IP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC277IP | TLC277IP |
| TLC277IPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC277IPE4 | TLC277IPE4 |