TLC083A 具有关断状态的双路宽带高输出驱动单电源运算放大器
The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPADTM packages and shutdown modes, enable higher levels of performance in a variety of applications.
Developed in TI‘s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both
|
TLC080A |
TLC081A |
TLC082A |
TLC083A |
TLC084A |
TLC085A |
| Number of Channels |
1 |
1 |
2 |
2 |
4 |
4 |
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) |
4.5 |
4.5 |
4.5 |
4.5 |
4.5 |
4.5 |
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) |
16 |
16 |
16 |
16 |
16 |
16 |
| Iq per channel(Max)(mA) |
2.5 |
2.5 |
2.5 |
2.5 |
2.5 |
2.5 |
| GBW(Typ)(MHz) |
10 |
10 |
10 |
10 |
10 |
10 |
| Slew Rate(Typ)(V/us) |
16 |
16 |
16 |
16 |
16 |
16 |
| VIO (25 deg C)(Max)(mV) |
1.4 |
1.4 |
1.4 |
1.4 |
1.4 |
1.4 |
| Offset Drift(Typ)(uV/C) |
1.2 |
1.2 |
1.2 |
1.2 |
1.2 |
1.2 |
| IIB(Max)(pA) |
50 |
50 |
50 |
50 |
50 |
50 |
| CMRR(Min)(dB) |
80 |
80 |
80 |
80 |
80 |
80 |
| Vn at 1kHz(Typ)(nV/rtHz) |
8.5 |
8.5 |
8.5 |
8.5 |
8.5 |
8.5 |
| Rating |
Catalog |
Catalog |
Catalog |
Catalog |
Catalog |
Catalog |
| Pin/Package |
8PDIP, 8SOIC |
8PDIP, 8SOIC |
8PDIP, 8SOIC |
14PDIP, 14SOIC |
14PDIP, 14SOIC, 20HTSSOP |
16PDIP, 16SOIC, 20HTSSOP |
| Operating Temperature Range(C) |
-40 to 125 |
-40 to 125 |
-40 to 125 |
-40 to 125 |
-40 to 125 |
-40 to 125 |
| Approx. Price (US$) |
0.70 | 1ku |
0.65 | 1ku |
0.75 | 1ku |
1.05 | 1ku |
1.05 | 1ku |
1.40 | 1ku |
TLC083A 特性
- Wide Bandwidth . . . 10 MHz
- High Output Drive
- IOH . . . 57 mA at VDD –1.5 V
- IOL . . . 55 mA at 0.5 V
- High Slew Rate
- SR+ . . . 16 V/us
- SR– . . . 19 V/us
- Wide Supply Range . . . 4.5 V to 16 V
- Supply Current . . . 1.9 mA/Channel
- Ultralow Power Shutdown Mode IDD . . . 125 uA/Channel
- Low Input Noise Voltage . . . 8.5 nV/
Hz\
- Input Offset Voltage . . . 60 uV
- Ultra-Small Packages
- 8 or 10 Pin MSOP (TLC080/1/2/3)
TLC083A 芯片订购指南
| 器件 |
状态 |
温度 |
价格（美元） |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| TLC083AID |
ACTIVE |
-40 to 125 |
1.05 | 1ku |
SOIC (D) | 14 |
50 | TUBE |
|
| TLC083AIDG4 |
ACTIVE |
-40 to 125 |
1.05 | 1ku |
SOIC (D) | 14 |
50 | TUBE |
|
| TLC083AIN |
ACTIVE |
-40 to 125 |
1.05 | 1ku |
PDIP (N) | 14 |
25 | TUBE |
|
| TLC083AINE4 |
ACTIVE |
-40 to 125 |
1.05 | 1ku |
PDIP (N) | 14 |
25 | TUBE |
|
TLC083A 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| TLC083AIDR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC083AIDR |
TLC083AIDR |
| TLC083AIDRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
TLC083AIDRG4 |
TLC083AIDRG4 |
| TLC083AIN |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
TLC083AIN |
TLC083AIN |
| TLC083AINE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
TLC083AINE4 |
TLC083AINE4 |
TLC083A 应用技术支持与电子电路设计开发资源下载
- TLC083A 数据资料 dataSheet 下载.PDF
- TI 德州仪器仪运算放大器 (Op Amp)产品选型与价格 . xls
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
- 在 PSPICE 中使用德州仪器 (TI) SPICE 模型 (zhca088.HTM, 8 KB)
- PowerPADTM Thermally Enhanced Package (slma002g.HTM, 8 KB)
- 运算放大器的单电源操作 (PDF 2174 KB)
- Tuning in Amplifiers (PDF 44 KB)
- Op Amp Performance Analysis (PDF 76 KB)
- An Error Analysis of the ISO102 in a Small Signal Measuring Application (PDF 29 KB)
- Level Shifting Signals with Differential Amplifiers (PDF 23 KB)
- Operational Amplifier Macromodels: A Comparison (PDF 59 KB)