SN74CB3Q16211 24 位 FET、2.5V/3.3V、低压高带宽总线开关
The SN74CB3Q16211 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q16211 is organized as two 12-bit bus switches with separate output-enable (1OE\, 2OE\) inputs
|
SN74CB3Q16211 |
| Voltage Nodes(V) |
2.5, 3.3 |
| Vcc range(V) |
2.3 to 3.6 |
| No. of Bits |
24 |
| Input Level |
LVTTL |
| ron(max)(ohms) |
9 |
| Static Current |
0.001 |
| Static Current(Max) |
0.003 |
| tpd max(ns) |
0.15 |
| Rating |
Catalog |
| Technology Family |
CB3Q |
SN74CB3Q16211 特性
- Member of the Texas Instruments WidebusTM Family
- High-Bandwidth Data Path (Up To 500 MHz)
- 5-V Tolerant I/Os with Device Powered Up or Powered Down
- Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 5 Typical)
- Rail-to-Rail Switching on Data I/O Ports
- 0-V to 5-V Switching With 3.3-V VCC
- 0-V to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow, With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 4 pF Typical)
- Fast Switching Frequency (fOE\ = 20 MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 1 mA Typical)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0-V to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
- Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
SN74CB3Q16211 芯片订购指南
| 器件 |
状态 |
温度 |
价格 |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| 74CB3Q16211DGGRE4 |
ACTIVE |
-40 to 85 |
1.70 | 1ku |
TSSOP (DGG) | 48 |
2000 | LARGE T&R |
|
| 74CB3Q16211DGGRG4 |
ACTIVE |
-40 to 85 |
1.70 | 1ku |
TSSOP (DGG) | 48 |
2000 | LARGE T&R |
|
| 74CB3Q16211DGVRE4 |
ACTIVE |
-40 to 85 |
1.70 | 1ku |
TVSOP (DGV) | 48 |
2000 | LARGE T&R |
|
| 74CB3Q16211DGVRG4 |
ACTIVE |
-40 to 85 |
1.70 | 1ku |
TVSOP (DGV) | 48 |
2000 | LARGE T&R |
|
| 74CB3Q16211DLRG4 |
ACTIVE |
-40 to 85 |
1.85 | 1ku |
SSOP (DL) | 48 |
1000 | LARGE T&R |
|
| SN74CB3Q16211DGGR |
ACTIVE |
-40 to 85 |
1.70 | 1ku |
TSSOP (DGG) | 48 |
2000 | LARGE T&R |
|
| SN74CB3Q16211DGVR |
ACTIVE |
-40 to 85 |
1.70 | 1ku |
TVSOP (DGV) | 48 |
2000 | LARGE T&R |
|
| SN74CB3Q16211DL |
ACTIVE |
-40 to 85 |
2.20 | 1ku |
SSOP (DL) | 48 |
25 | TUBE |
|
| SN74CB3Q16211DLG4 |
ACTIVE |
-40 to 85 |
2.20 | 1ku |
SSOP (DL) | 48 |
25 | TUBE |
|
| SN74CB3Q16211DLR |
ACTIVE |
-40 to 85 |
1.85 | 1ku |
SSOP (DL) | 48 |
1000 | LARGE T&R |
|
SN74CB3Q16211 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| 74CB3Q16211DGGRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3Q16211DGGRE4 |
74CB3Q16211DGGRE4 |
| 74CB3Q16211DGGRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3Q16211DGGRG4 |
74CB3Q16211DGGRG4 |
| 74CB3Q16211DGVRE4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3Q16211DGVRE4 |
74CB3Q16211DGVRE4 |
| 74CB3Q16211DGVRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3Q16211DGVRG4 |
74CB3Q16211DGVRG4 |
| 74CB3Q16211DLRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
74CB3Q16211DLRG4 |
74CB3Q16211DLRG4 |
| SN74CB3Q16211DGGR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CB3Q16211DGGR |
SN74CB3Q16211DGGR |
| SN74CB3Q16211DGVR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CB3Q16211DGVR |
SN74CB3Q16211DGVR |
| SN74CB3Q16211DL |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CB3Q16211DL |
SN74CB3Q16211DL |
| SN74CB3Q16211DLG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CB3Q16211DLG4 |
SN74CB3Q16211DLG4 |
| SN74CB3Q16211DLR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
SN74CB3Q16211DLR |
SN74CB3Q16211DLR |
SN74CB3Q16211 应用技术支持与电子电路设计开发资源下载
- SN74CB3Q16211 数据资料 dataSheet 下载.PDF
- TI 德州仪器信号开关产品选型与价格 . xls
- Logic Guide 2009 (PDF 4263 KB)
- 防止模拟开关的额外功耗 (PDF 392 KB) (PDF 1305 KB)
- Understanding and Interpreting Standard-Logic Data Sheets (PDF 857 KB)
- TI IBIS File Creation, Validation, and Distribution Processes (PDF 380 KB)
- Implications of Slow or Floating CMOS Inputs (PDF 101 KB)
- CMOS Power Consumption and CPD Calculation (PDF 89 KB)
- Designing With Logic (PDF 186 KB)
- Live Insertion (PDF 150 KB)
- Input and Output Characteristics of Digital Integrated Circuits (PDF 1708 KB)
- Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc (PDF 43 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- LOGIC Pocket Data Book (PDF 6001 KB)
- HiRel Unitrode Power Management Brochure (PDF 206 KB)
- Logic Cross-Reference (PDF 2938 KB)