The SN74ALS236 is a 256-bit memory utilizing advanced low-power Schottky IMPACTTM technology. It features high speed with fast fall-through times and is organized as 64 words by 4 bits.
A first-in, first-out (FIFO) memory is a storage device that allows data to be written into and read from its array at independent data rates. The SN74ALS236 is designed to process data at rates up to 30 MHz in a bit-parallel format, word by word.
Data is written into memory on the rising edge of the shift-in (SI) input. When SI goes low, the first data word ripples through to the output (see Figure 1). As the FIFO fills up, the data words stack up in the order they were written. When the FIFO is full, additional shift-in pulses have no effect
| SN74ALS236 | |
| Depth | 64 |
| Width | 4 |
| Fmax(MHz) | 30 |
| Sync/Async | A |
| Voltage Nodes(V) | 5 |
| Vcc range(V) | 4.5 to 5.5 |
| Output Drive(mA) | -2.6/24 |
| Rating | Catalog |
| Technology Family | ALS |
| 器件 | 状态 | 温度 | 价格（美元） | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| SN74ALS236DW | ACTIVE | 0 to 70 | 3.19 | 1ku | SOIC (DW) | 16 | 40 | TUBE | |
| SN74ALS236N | ACTIVE | 0 to 70 | 3.51 | 1ku | PDIP (N) | 16 | 25 | TUBE |
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| SN74ALS236DW | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | SN74ALS236DW | SN74ALS236DW |
| SN74ALS236N | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | SN74ALS236N | SN74ALS236N |