INA115 | |
Gain (V/V) | 1 to 10000 |
Non-Linearity (+/-) (Max) (%) | 0.002 |
Input Bias Current (+/-) (Max) (nA) | 2 |
Output Offset (+/-) (Max) (uV) | 100/G |
Input Offset Drift (+/-) (Max) (uV/Degrees Celsius) | 0.25 |
Output Offset Drift (+/-) (Max) (uV/Degrees Celsius) | 5/G |
CMRR (Min) (dB) | 110 |
Bandwidth at G=100 (Min) (kHz) | 10 |
Noise at 1kHz (Typ) (nV/rt(Hz)) | 11 |
Vs (Min) (V) | 4.5 |
Vs (Max) (V) | 36 |
Quiescent Current (+/-) (Typ) (mA) | 2.2 |
Pin/Package | 16SOIC |
器件 | 状态 | 温度 | 价格 | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
INA115AU | ACTIVE | -40 to 85 | 5.05 | 1ku | SOIC (DW) | 16 | 40 | TUBE | |
INA115AU/1K | ACTIVE | -40 to 85 | 4.20 | 1ku | SOIC (DW) | 16 | 1000 | LARGE T&R | |
INA115AU/1KE4 | ACTIVE | -40 to 85 | 4.20 | 1ku | SOIC (DW) | 16 | 1000 | LARGE T&R | |
INA115AUG4 | ACTIVE | -40 to 85 | 5.05 | 1ku | SOIC (DW) | 16 | 40 | TUBE | |
INA115BU | ACTIVE | -40 to 85 | 6.20 | 1ku | SOIC (DW) | 16 | 40 | TUBE | |
INA115BUG4 | ACTIVE | 6.20 | 1ku | SOIC (DW) | 16 | 40 | TUBE |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
INA115AU | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-3-260C-168 HR | INA115AU | INA115AU |
INA115AU/1K | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-3-260C-168 HR | INA115AU/1K | INA115AU/1K |
INA115AU/1KE4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-3-260C-168 HR | INA115AU/1KE4 | INA115AU/1KE4 |
INA115AUG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-3-260C-168 HR | INA115AUG4 | INA115AUG4 |
INA115BU | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-3-260C-168 HR | INA115BU | INA115BU |
INA115BUG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-3-260C-168 HR | INA115BUG4 | INA115BUG4 |