CSD16321Q5 | CSD16325Q5 | |
VDS(V) | 25 | 25 |
VGS(V) | 10 | 10 |
VGSTH(V) | 1.1 | 1.1 |
RDS(on) at VGS=4.5V(mOhm) | 2.1 | 1.7 |
QGD(nC) | 2.5 | 3.5 |
QGS(nC) | 4 | 6.6 |
QG(nC) | 14 | 18 |
Operating Temperature Range(°C) | -55 to 150 | -55 to 150 |
Pin/Package | 8SON | 8SON |
The NexFETTM power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
器件 | 状态 | 温度 (oC) | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
CSD16321Q5 | ACTIVE | -55 to 150 | 0.36 | 1ku | SON (DQH) | 8 | 2500 | LARGE T&R |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
CSD16321Q5 | Pb-Free (RoHS Exempt) | CU SN | Level-1-260C-UNLIM | CSD16321Q5 | CSD16321Q5 |