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BQ4011Y 32Kx8 非易失性 SRAM,10% 电压容限

BQ4011Y 描述

The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM. The control circuitry constantly monitors the single supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation. At this time the integral energy source is switched on to sustain the memory until after VCC returns valid. The bq4011/Y/LY uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM. The bq4011/Y/LY requires no external circuitry and is compatible with the industry-standard 256-kb SRAM pinout

BQ4011 BQ4011LY BQ4011Y
Supply Voltage(V) 5 3.3 5
Memory Density(Kb) 256 256 256
Pin/Package 28DIP MODULE 28DIP MODULE 28DIP MODULE
Approx. Price (US$) 10.45 | 1ku 8.05 | 1ku 10.45 | 1ku
Neg Voltage Tolerance(%) 5 10 10
BQ4011Y 特性
BQ4011Y 芯片订购指南
器件 状态 温度 (oC) 价格(美元) 封装 | 引脚 封装数量 | 封装载体 丝印标记
BQ4011YMA-70N ACTIVE -40 to 85 23.60 | 1ku DIP MODULE (MA) | 32 12  
BQ4011Y 质量与无铅数据
器件 环保计划* 铅/焊球涂层 MSL 等级/回流焊峰 环保信息与无铅 (Pb-free) DPPM / MTBF / FIT 率
BQ4011YMA-70N Pb-Free (RoHS) Call TI N/A for Pkg Type BQ4011YMA-70N BQ4011YMA-70N
BQ4011Y 应用技术支持与电子电路设计开发资源下载
  1. BQ4011Y 数据资料 dataSheet 下载.PDF
  2. TI 德州仪器NVSRAM(非易失性 SRAM)产品选型与价格 . xls
  3. PowerPADTM Thermally Enhanced Package (PDF 1040 KB)
  4. 全面认识开关型电源中的BUCK-BOOST功率级 (Rev. A) (PDF 2206 KB)
  5. Shelf-Life Evaluation of Lead-Free Component Finishes (PDF 1305 KB)
  6. PowerPADTM Made Easy (PDF 57 KB)
  7. 标准线性产品交叉参考 (Rev. D) (PDF 1058 KB)
  8. 模数规格和性能特性术语表 (Rev. A) (PDF 1993 KB)
  9. 所选封装材料的热学和电学性质 (PDF 645 KB)
  10. 高速数据转换 (PDF 1967 KB)
BQ4011Y 相关工具
名称 型号 公司 工具/软件类型
BQ4011Y 评估模块 BQ4011YEVM Texas Instruments 开发电路板/EVM