首页 > ST 意法 > STR10微控制器 > ST10F273Z4

ST10F273Z4Q3 512KBit Flash,36KBit RAM,16位微控制器LQFP-144封装

ST10F273Z4Q3 概述

The architecture of the ST10F273Z4 combines advantages of both RISC and CISC processors and an advanced peripheral subsystem. The block diagram gives an overview of the different on-chip components and the high bandwidth internal bus structure of the ST10F273Z4.

The memory space of the ST10F273Z4 is configured in a unified memory architecture.Code memory, data memory, registers and I/O ports are organized within the same linear address space of 16 Mbytes. The entire memory space can be accessed Byte wise or Word wise. Particular portions of the on-chip memory have additionally been made directly bit addressable.

IFlash: 512 Kbytes of on-chip Flash memory. It is divided in 10 blocks (B0F0...B0F9) of the Bank 0 and two blocks of Bank 1 (B1F0, B1F1): read-while-write operations inside the same Bank are not allowed. When Bootstrap mode is selected, the Test-Flash Block B0TF (8 Kbyte) appears at address 00’0000h: refer to Chapter 5: Internal Flash memory onpage 25 for more details on memory mapping in boot mode.

ST10F273Z4Q3 特性:
ST10F273Z4Q3 订购型号:
Order code Package Max CPU
frequency
(MHz)
Flash Xflash RAM Temperature
range (°C)
ST10F273Z4T3 PQFP144 64 512 KB No 36 KB -40/+125
ST10F273Z4Q3 LQFP144 40 512 KB No 36 KB -40/+125
ST10F273Z4Q3 技术支持与电子电路设计开发资源下载
  1. ST10F273Z4数据手册 DataSheet 下载.pdf
  2. ST10 16位微控制器选型参数
  3. 手册和产品指南.pdf
  4. 8、16、32位微控制器.pdf
  5. 意法半导体应用支持 . PDF
  6. 先进半导体解决方案的门电子
  7. 电机控制参考指南
  8. 周围半导体机顶盒应用. PDF
  9. STM32,STR7和STR9开发工具 . PDF
  10. 8 ,16和32位微控制器产品和工具选择指南. PDF
  11. 电机控制选型指南. PDF