The ISL6615A drives both upper and lower gates over a range of 4.5V to 13.2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses.
The ISL6615A features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node.
An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead-time. The ISL6615A includes an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the load if the upper MOSFET(s) is shorted.
The ISL6615A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage.
| 芯片型号 | 产品状态 | 温度范围 | 封装尺寸图 | 潮湿敏感度等级MSL | 美元价格US $ |
| ISL6615ACBZ | 量产 | 民用级 | 8 Ld SOIC | 1 | 1.67 |
| ISL6615ACBZ-T | 量产 | 民用级 | 8 Ld SOIC T+R | 1 | 1.67 |
| ISL6615ACRZ | 量产 | 民用级 | 10 Ld DFN | 1 | 1.69 |
| ISL6615ACRZ-T | 量产 | 民用级 | 10 Ld DFN T+R | 1 | 1.69 |
| ISL6615AIBZ | 量产 | 工业级 | 8 Ld SOIC | 1 | 1.8 |
| ISL6615AIBZ-T | 量产 | 工业级 | 8 Ld SOIC T+R | 1 | 1.8 |
| ISL6615AIRZ | 量产 | 工业级 | 10 Ld DFN | 1 | 1.82 |
| ISL6615AIRZ-T | 量产 | 工业级 | 10 Ld DFN T+R | 1 | 1.82 |