ISL6614B

The ISL6614B integrates two ISL6613B MOSFET drivers and is specifically designed to drive two Channel MOSFETs in a synchronous rectified buck converter topology. This driver combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs forms complete core-voltage regulator solutions for advanced microprocessors.

The ISL6614B features 7V rising threshold and drives both the upper and lower gates simultaneously over a range from 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. This driver is optimized for POL DC/DC Converters for IBA Systems.

An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during start-up.

The ISL6614B also features a three-state PWM input which, working together with Intersil's multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.

ISL6614B 特点

• Pin-to-pin Compatible with HIP6602 SOIC Family
• Quad N-Channel MOSFET Drives for Two Synchronous Rectified Bridges
• Low VCC Rising Threshold (7V) for IBA Applications
• Advanced Adaptive Zero Shoot-Through Protection
  • Body Diode Detection
  • Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
  • 3A Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat Sinking
• QFN Package:
  • Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
  • Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile
• Pb-free Available (RoHS compliant)

ISL6614B 应用

• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel(R) and AMD(R) Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD

ISL6614B 芯片订购指南

芯片型号	产品状态	温度范围	封装尺寸图	潮湿敏感度等级MSL	美元价格US $
ISL6614BCBZ	量产	民用级	14 Ld SOIC	3	2.72
ISL6614BCBZ-T	量产	民用级	14 Ld SOIC T+R	3	2.72
ISL6614BCRZ	量产	民用级	16 Ld QFN	3	2.72
ISL6614BCRZ-T	量产	民用级	16 Ld QFN T+R	3	2.72
ISL6614BIBZ	量产	工业级	14 Ld SOIC	3	2.83
ISL6614BIBZ-T	量产	工业级	14 Ld SOIC T+R	3	2.83
ISL6614BIRZ	量产	工业级	16 Ld QFN	3	2.83
ISL6614BIRZ-T	量产	工业级	16 Ld QFN T+R	3	2.83
ISL6614BCB	停产	民用级	16 Ld QFN	1	N/A
ISL6614BCB-T	停产	民用级	16 Ld QFN T+R	1	N/A
ISL6614BCR	停产	民用级	16 Ld QFN	1	N/A
ISL6614BCR-T	停产	民用级	16 Ld QFN T+R	1	N/A
ISL6614BIB	停产	工业级	14 Ld SOIC	1	N/A
ISL6614BIB-T	停产	工业级	14 Ld SOIC T+R	1	N/A
ISL6614BIR	停产	工业级	16 Ld QFN	1	N/A
ISL6614BIR-T	停产	工业级	16 Ld QFN T+R	1	N/A

ISL6614B 应用技术支持与电子电路设计开发资源下载

1. ISL6614B 数据资料 datatSheet 下载.PDF
2. Power 电源管理器件产品选型指南 . pdf