ISL6530 Dual 5V Synchronous Buck Pulse-Width Modulator (PWM) Controller for DDRAM Memory VDDQ and VTTTermination

VIN (min) (V)	5
VIN (max) (V)	5
VOUT (min) (V)	0.8
VOUT (max) (V)	5
IOUT (max) (A)	1

The ISL6530 provides complete control and protection for dual DC-DC converters optimized for high-performance DDRAM memory applications. It is designed to drive low cost N-channel MOSFETs in synchronous-rectified buck topology to efficiently generate 2.5V VDDQ for powering DDRAM memory, VREF for DDRAM differential signalling, and VTT for signal termination. The ISL6530 integrates all of the control, output adjustment, monitoring and protection functions into a single package.

The VDDQ output of the converter is maintained at 2.5V through an integrated precision voltage reference. The Vsub>REF output is precisely regulated to 1/2 the memory power supply, with a maximum tolerance of ±1% over temperature and line voltage variations. VTT accurately tracks Vsub>REF. During V2_SD sleep mode, the VTT output is maintained by a low power window regulator.

The ISL6530 provides simple, single feedback loop, voltagemode control with fast transient response. It includes two phase-locked 300kHz triangle-wave oscillators which are displaced 90o to minimize interference between the two PWM regulators. The regulators feature error amplifiers with a 15MHz gain-bandwidth product and 6V/us slew rate which enables high converter bandwidth for fast transient performance. The resulting PWM duty ratio ranges from 0% to 100%.

The ISL6530 protects against over-current conditions by inhibiting PWM operation. The ISL6530 monitors the current in the VDDQ regulator by using the rDS(ON) of the upper MOSFET which eliminates the need for a current sensing resistor.

ISL6530 特点

Provides VDDQ, Vsub>REF, and VTT voltages for one- and two-channel DDRAM memory systems
Excellent voltage regulation
- VDDQ = 2.5V ±2% over full operating range
- Vsub>REF = (VDDQ÷2) ±1% over full operating range
- VTT = Vsub>REF ± 30mV
Supports 'S3' sleep mode
- VTT is held at VDDQ÷2 via low power window regulator to minimize wake-up time
Fast transient response
- Full 0% to 100% duty ratio
Operates from +5V input
Overcurrent fault monitor on VDD
- Does not require extra current sensing element
- Uses MOSFET's rDS(ON)
Drives inexpensive N-Channel MOSFETs
Small converter size
- 300kHz fixed frequency oscillator
24 Lead, SOIC or 32 Lead, 5mm×5mm QFN

ISL6530 应用

VDDQ, VTT, and Vsub>REF regulation for DDRAM memory systems
- Main Memory in AMD(R) AthlonTM and K8TM, Pentium(R) III, Pentium IV, Transmeta, PowerPCTM, AlphaPCTM, and UltraSparc(R) based computer systems
- Video memory in graphics systems
High-power tracking DC-DC regulators

ISL6530 芯片订购指南

芯片型号	产品状态	温度范围	封装尺寸图	潮湿敏感度等级MSL	美元价格US $
ISL6530CBZ	量产	民用级	24 Ld SOIC	3	2.08
ISL6530CBZ-T	量产	民用级	24 Ld SOIC T+R	3	2.08
ISL6530CRZ	量产	民用级	32 Ld QFN	3	2.24
ISL6530CRZ-T	量产	民用级	32 Ld QFN T+R	3	2.24
ISL6530EVAL1	量产		评估板	N/A	价格录入中
ISL6530EVAL2	量产		评估板	N/A	价格录入中
ISL6530CB	停产	民用级	24 Ld SOIC	1	N/A
ISL6530CB-T	停产	民用级	24 Ld SOIC T+R	1	N/A
ISL6530CR	停产	民用级	32 Ld QFN	1	N/A
ISL6530CR-T	停产	民用级	32 Ld QFN T+R	1	N/A