The ISL6161 is a HOT SWAP dual supply power distribution controller that can be used in PCI-Express applications.
Two external N-Channel MOSFETs are driven to distribute and control power while providing load fault isolation. At turn-on, the gate of each external N-Channel MOSFET is charged with a 10μA current source. Capacitors on each gate (see the "Typical Application Diagram" on page 1), create a programmable ramp (soft turn-on) to control in-rush currents. A built-in charge pump supplies the gate drive for the 12V supply N-Channel MOSFET switch.
Overcurrent protection is facilitated by two external current sense resistors and FETs. When the current through either resistor exceeds the user programmed value, the controller enters the current regulation mode. The time-out capacitor, CTIM, starts charging as the controller enters the time-out period. Once CTIM charges to a 2V threshold, both the N-Channel MOSFETs are latched off. In the event of a hard and fast fault of at least 3x the programmed current limit level, the N-Channel MOSFET gates are pulled low immediately before entering the time-out period. The controller is reset by a rising edge on the ENABLE pin.
The ISL6161 constantly monitors both output voltages and reports either one being low on the PGOOD output as a low. The 12V PGOOD Vth is ~10.8V and the 3.3V Vth is ~2.8V nominally.
| 芯片型号 | 产品状态 | 温度范围 | 封装尺寸图 | 潮湿敏感度等级MSL | 美元价格US $ |
| ISL6161CBZA | 量产 | 民用级 | 14 Ld SOIC | 3 | 2.29 |
| ISL6161CBZA-T | 量产 | 民用级 | 14 Ld SOIC T+R | 3 | 2.29 |
| ISL6161IBZA | 量产 | 工业级 | 14 Ld SOIC | 3 | 3.36 |
| ISL6161IBZA-T | 量产 | 工业级 | 14 Ld SOIC T+R | 3 | 3.36 |
| ISL6161CB | 停产 | 民用级 | 14 Ld SOIC | 1 | N/A |
| ISL6161CB-T | 停产 | 民用级 | 14 Ld SOIC T+R | 1 | N/A |