This family of fully featured hot swap power controllers targets applications in the +2.5V to +12V range. The ISL6115 is for +12V control, the ISL6116 for +5V, the ISL6117 for +3.3V and the ISL6120 for +2.5V control applications. Each has a hard wired undervoltage (UV) monitoring and reporting threshold level approximately 80% of the aforementioned voltage.
The ISL6115 has an integrated charge pump allowing control of up to +16V rails using an external N-Channel MOSFET whereas the other devices utilize the +12V bias voltage to fully enhance the N-Channel pass FET. All ICs feature programmable overcurrent (OC) detection, current regulation (CR) with time delay to latch-off and soft-start.
The current regulation level is set by 2 external resistors; RISET sets the CR Vth and the other is a low ohmic sense element across, which the CR Vth is developed. The CR duration is set by an external capacitor on the CTIM pin, which is charged with a 20μA current once the CR Vth level is reached. If the voltage on the CTIM capacitor reaches 1.9V the IC then quickly pulls down the GATE output latching off the pass FET.
This family although designed for high side switch control the ISL6116, ISL6117, ISL6120 can also be used in a low side configuration for control of much higher voltage potentials.
| 芯片型号 | 产品状态 | 温度范围 | 封装尺寸图 | 潮湿敏感度等级MSL | 美元价格US $ |
| ISL6120CBZA | 量产 | 民用级 | 8 Ld SOIC | 1 | 1.58 |
| ISL6120CBZA-T | 量产 | 民用级 | 8 Ld SOIC T+R | 1 | 1.58 |
| ISL6120CB | 停产 | 民用级 | 8 Ld SOIC | 1 | N/A |
| ISL6120CB-T | 停产 | 民用级 | 8 Ld SOIC T+R | 1 | N/A |