The HIP6602B is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous rectified buck converter topology. This device is available in either a 14-lead SOIC or a 16-lead QFN package with a PAD to thermally enhance the package. These drivers combined with a HIP63xx or ISL65xx series of Multiphase Buck PWM controllers and MOSFETs form a complete core voltage regulator solution for advanced microprocessors.
The HIP6602B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses.
The output drivers in the HIP6602B have the capacity to efficiently switch power MOSFETs at high frequencies. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. This device implements bootstrapping on the upper gates with a single external capacitor and resistor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
芯片型号 | 产品状态 | 温度范围 | 封装尺寸图 | 潮湿敏感度等级MSL | 美元价格US $ |
HIP6602BCBZ | 量产 | 民用级 | 14 Ld SOIC | 3 | 2.42 |
HIP6602BCBZ-T | 量产 | 民用级 | 14 Ld SOIC T+R | 3 | 2.42 |
HIP6602BCRZ | 量产 | 民用级 | 16 Ld QFN | 3 | 2.47 |
HIP6602BCRZ-T | 量产 | 民用级 | 16 Ld QFN T +R | 3 | 2.47 |
HIP6602BCRZA | 量产 | 民用级 | 16 Ld QFN | 3 | 2.47 |
HIP6602BCRZA-T | 量产 | 民用级 | 16 Ld QFN T +R | 3 | 2.47 |
HIP6602BCB | 停产 | 民用级 | 14 Ld SOIC | 1 | N/A |
HIP6602BCBZA-T | 停产 | 民用级 | 14 Ld SOIC T +R | 3 | N/A |
HIP6602BCR | 停产 | 民用级 | 16 Ld QFN | 1 | N/A |
HIP6602BCB-T | To Be Discontinued | 民用级 | 14 Ld SOIC T +R | 1 | 2.91 |
HIP6602BCR-T | To Be Discontinued | 民用级 | 16 Ld QFN T +R | 1 | 2.47 |