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HIP6602B

The HIP6602B is a high frequency, two power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous rectified buck converter topology. This device is available in either a 14-lead SOIC or a 16-lead QFN package with a PAD to thermally enhance the package. These drivers combined with a HIP63xx or ISL65xx series of Multiphase Buck PWM controllers and MOSFETs form a complete core voltage regulator solution for advanced microprocessors.

The HIP6602B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses.

The output drivers in the HIP6602B have the capacity to efficiently switch power MOSFETs at high frequencies. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. This device implements bootstrapping on the upper gates with a single external capacitor and resistor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.

HIP6602B 特点
HIP6602B 应用
HIP6602B 芯片订购指南
芯片型号 产品状态 温度范围 封装尺寸图 潮湿敏感度等级MSL 美元价格US $
HIP6602BCBZ 量产 民用级 14 Ld SOIC 3 2.42
HIP6602BCBZ-T 量产 民用级 14 Ld SOIC T+R 3 2.42
HIP6602BCRZ 量产 民用级 16 Ld QFN 3 2.47
HIP6602BCRZ-T 量产 民用级 16 Ld QFN T +R 3 2.47
HIP6602BCRZA 量产 民用级 16 Ld QFN 3 2.47
HIP6602BCRZA-T 量产 民用级 16 Ld QFN T +R 3 2.47
HIP6602BCB 停产 民用级 14 Ld SOIC 1 N/A
HIP6602BCBZA-T 停产 民用级 14 Ld SOIC T +R 3 N/A
HIP6602BCR 停产 民用级 16 Ld QFN 1 N/A
HIP6602BCB-T To Be Discontinued 民用级 14 Ld SOIC T +R 1 2.91
HIP6602BCR-T To Be Discontinued 民用级 16 Ld QFN T +R 1 2.47
HIP6602B 应用技术支持与电子电路设计开发资源下载
  1. HIP6602B 数据资料 datatSheet 下载.PDF
  2. Power 电源管理器件产品选型指南 . pdf