The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the lowpower benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply
芯片型号 | 产品状态 | 温度范围 | 封装尺寸图 | 潮湿敏感度等级MSL | 美元价格US $ |
HIP2101EIB | 量产 | 工业级 | 8 Ld EPSOIC | 2 | 2.22 |
HIP2101EIBZ | 量产 | 工业级 | 8 Ld EPSOIC | 2 | 1.86 |
HIP2101EIBZT | 量产 | 工业级 | 8 Ld EPSOIC T+R | 2 | 1.86 |
HIP2101IB | 量产 | 工业级 | 8 Ld SOIC | 1 | 2.13 |
HIP2101IBZ | 量产 | 工业级 | 8 Ld SOIC | 1 | 1.78 |
HIP2101IBZT | 量产 | 工业级 | 8 Ld SOIC T+R | 1 | 1.78 |
HIP2101IR4Z | 量产 | 工业级 | 12 Ld DFN | 3 | 1.81 |
HIP2101IR4ZT | 量产 | 工业级 | 12 Ld DFN T+R | 3 | 1.81 |
HIP2101IRZ | 量产 | 工业级 | 16 Ld QFN | 3 | 1.93 |
HIP2101IRZT | 量产 | 工业级 | 16 Ld QFN T+R | 3 | 1.93 |
HIP2101EIBT | 停产 | 工业级 | 8 Ld EPSOIC T+R | 2 | N/A |
HIP2101IBT | 停产 | 工业级 | 8 Ld SOIC T+R | 1 | N/A |
HIP2101IR4 | 停产 | 工业级 | 12 Ld DFN | 2 | N/A |
HIP2101IR4T | 停产 | 工业级 | 12 Ld DFN T+R | 2 | N/A |
HIP2101IRT | 停产 | 工业级 | 16 Ld QFN T+R | 1 | N/A |
HIP2101IR | To Be Discontinued | 工业级 | 16 Ld QFN | 1 | 1.93 |