The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.
芯片型号 | 产品状态 | 温度范围 | 封装尺寸图 | 潮湿敏感度等级MSL | 美元价格US $ |
HIP2100EIBZ | 量产 | 工业级 | 8 Ld EPSOIC | 2 | 1.86 |
HIP2100EIBZT | 量产 | 工业级 | 8 Ld EPSOIC T +R | 2 | 1.86 |
HIP2100EVAL2 | 量产 | 评估板 | N/A | 价格录入中 | |
HIP2100IB | 量产 | 工业级 | 8 Ld SOIC | 1 | 2.13 |
HIP2100IBT | 量产 | 工业级 | 8 Ld SOIC T +R | 1 | 2.13 |
HIP2100IBZ | 量产 | 工业级 | 8 Ld SOIC | 1 | 1.06 |
HIP2100IBZT | 量产 | 工业级 | 8 Ld SOIC T +R | 1 | 1.06 |
HIP2100IR4Z | 量产 | 工业级 | 12 Ld DFN | 3 | 1.81 |
HIP2100IR4ZT | 量产 | 工业级 | 12 Ld DFN T+R | 3 | 1.81 |
HIP2100IRZ | 量产 | 工业级 | 16 Ld QFN | 3 | 1.93 |
HIP2100IRZT | 量产 | 工业级 | 16 Ld QFN T+R | 3 | 1.93 |
HIP2100EVAL1Z | Coming Soon | 评估板 | N/A | 价格录入中 | |
HIP2100EIB | 停产 | 工业级 | 8 Ld EPSOIC | 2 | N/A |
HIP2100EIBT | 停产 | 工业级 | 8 Ld EPSOIC T +R | 2 | N/A |
HIP2100EVAL | 停产 | 评估板 | N/A | N/A | |
HIP2100IR | 停产 | 工业级 | 16 Ld QFN | 1 | N/A |
HIP2100IR4 | 停产 | 工业级 | 12 Ld DFN | 2 | N/A |
HIP2100IR4T | 停产 | 工业级 | 12 Ld DFN T+R | 2 | N/A |
HIP2100IRT | 停产 | 工业级 | 16 Ld QFN T+R | 1 | N/A |