The HIP1012A is a HOT SWAP dual supply power distribution controller. Two external N-Channel MOSFETs are driven to distribute power while providing load fault isolation. At turn-on, the gate of each external N-Channel MOSFET is charged with a 10uA current source. Capacitors on each gate (see the Typical Application Diagram), create a programmable ramp (soft turn-on) to control inrush currents. A built in charge pump supplies the gate drive for the 12V supply N-Channel MOSFET switch.
Overcurrent protection is facilitated by two external current sense resistors. When the current through either resistor exceeds the user programmed value the controller enters the current regulation mode. The time-out capacitor, CTIM, starts charging as the controller enters the time out period. Once CTIM charges to a 2V threshold, the N-Channel MOSFETs are latched off. In the event of a fault at least three times the current limit level, the N-Channel MOSFET gates are pulled low immediately before entering time out period. The controller is reset by a rising edge on either PWRON pin. Choosing the voltage selection mode the HIP1012 controls either +12V/5V or +3.3V/+5V supplies.
| 芯片型号 | 产品状态 | 温度范围 | 封装尺寸图 | 潮湿敏感度等级MSL | 美元价格US $ |
| HIP1012ACBZA | 量产 | 民用级 | 14 Ld SOIC | 3 | 3.51 |
| HIP1012ACBZA-T | 量产 | 民用级 | 14 Ld SOIC T+R | 3 | 3.56 |
| HIP1012ACB | 停产 | 民用级 | 14 Ld SOIC | 1 | N/A |
| HIP1012ACB-T | To Be Discontinued | 民用级 | 14 Ld SOIC T+R | 1 | 4.27 |