HFA3102

The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.

Applications

• Single Balanced Mixers
• Wide Band Amplification Stages
• Differential Amplifiers
• Multipliers
• Automatic Gain Control Circuits
• Frequency Doublers, Tripplers
• Oscillators
• Constant Current Sources
• Wireless Communication Systems
• Radio and Satellite Communications
• Fiber Optic Signal Processing
• High Performance Instrumentation

HFA3102 特点

• High Gain-Bandwidth Product (fT) 10GHz
• High Power Gain-Bandwidth Product 5GHz
• High Current Gain (hFE) 70
• Noise Figure (Transistor) 3.5dB
• Low Collector Leakage Current <0.01nA
• Excellent hFE and VBE Matching
• Pin-to-Pin to UPA102G
• Pb-Free Plus Anneal Available (RoHS Compliant)

HFA3102 芯片订购指南

芯片型号	产品状态	温度范围	封装尺寸图	潮湿敏感度等级MSL	美元价格US $
HFA3102BZ	量产	工业级	14 Ld SOIC	3	1.68
HFA3102BZ96	量产	工业级	14 Ld SOIC T+R	3	1.68
HFA3102B	停产	工业级	14 Ld SOIC	1	N/A
HFA3102B96	停产	工业级	14 Ld SOIC T+R	1	N/A

HFA3102 应用技术支持与电子电路设计开发资源下载

1. HFA3102 数据手册DataSheet下载.PDF