The EL7154 three-state pin driver is particularly well suited for ATE and level shifting applications. The 4A peak drive capability, makes the EL7154 an excellent choice when driving high speed capacitive lines.
The P-Channel MOSFET is completely isolated from the power supply, providing a high degree of flexibility. Pin (7) can be grounded, and the output can be taken from pin (8) when a “source follower” output is desired. The N-Channel MOSFET has an isolated drain, but shares a common bus with pre-drivers and level shifter circuits. This is necessary to ensure that the N-Channel device can turn off effectively when VL goes below GND. In some power-FET and IGBT applications, negative drive is desirable to insure effective turn-off. The EL7154 can be used in these applications by returning VL to a moderate negative potential
| 芯片型号 | 产品状态 | 温度范围 | 封装尺寸图 | 潮湿敏感度等级MSL | 美元价格US $ |
| EL7154CN | 量产 | 工业级 | 8 Ld PDIP | N/A | 2.48 |
| EL7154CNZ | 量产 | 工业级 | 8 Ld PDIP | N/A | 2.48 |
| EL7154CS | 量产 | 工业级 | 8 Ld SOIC | 1 | 2.48 |
| EL7154CS-EVAL | 量产 | 评估板 | N/A | 价格录入中 | |
| EL7154CS-T13 | 量产 | 工业级 | 8 Ld SOIC T+R | 1 | 2.57 |
| EL7154CS-T7 | 量产 | 工业级 | 8 Ld SOIC T+R | 1 | 2.57 |
| EL7154CSZ | 量产 | 工业级 | 8 Ld SOIC | 3 | 2.48 |
| EL7154CSZ-T13 | 量产 | 工业级 | 8 Ld SOIC T+R | 3 | 2.57 |
| EL7154CSZ-T7 | 量产 | 工业级 | 8 Ld SOIC T+R | 3 | 2.57 |