序号 | 参数 | 单位 | 测试条件 | 规 范 值 | |||
3DG91A | 3DG91B | ||||||
1 | PCM | W | TA≤28℃ | 0.45 | |||
2 | IC | mA | 150 | ||||
3 | TjM | ℃ | 175 | ||||
4 | ICEO | μA | VCE=10V | ≤20 | ≤20 | ||
5 | V(BR)CBO | V | ICB=1mA | ≥40 | ≥50 | ||
6 | V(BR)CEO | V | ICE=1mA | ≥25 | ≥35 | ||
7 | V(BR)EBO | V | IEB=0.2mA | ≥4 | ≥4 | ||
8 | VCE(sat) | V | IC=0.1A,IB=0.02A | ≤0.5 | ≤0.5 | ||
9 | hFE | VCE=5V,IC=30mA | 15~200 | 15~120 | |||
10 | fT | MHz | VCE=10V,IC=30mA,f=400MHz | ≥800 | ≥800 | ||
11 | PO | W | VCE=24V,Pi=0.03W,f=400MHz | ≥0.3 | ≥0.3 | ||
12 | Gp | dB | ≥10 | ≥10 |
金属封装硅高频中功率晶体管hFE分档表 | ||||||||
hFE | 15~40 | 40~80 | 80~120 | 120~200 | ||||
色标 | 橙 | 绿 | 蓝 | 紫 |