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3DG51 型晶体管

3DG51 型晶体管参数
序号 参数 单位 测试条件 规 范 值
3DG51A 3DG51B 3DG51C 3DG51D 3DG51E
1 PCM mW   100
2 IC mA   15
3 TjM  ℃   175
4 ICBO μA VCB=6V ≤0.1 ≤0.1 ≤0.1 ≤0.1 ≤0.1
5 ICEO μA VCE=6V ≤0.1 ≤0.1 ≤0.1 ≤0.1 ≤0.1
6 IEBO μA VEB=1.5V ≤0.1 ≤0.1 ≤0.1 ≤0.1 ≤0.1
7 V(BR)CBO V ICB=50μA ≥15 ≥15 ≥15 ≥15 ≥15
8 V(BR)CEO V ICE=50μA ≥10 ≥10 ≥10 ≥10 ≥10
9 V(BR)EBO V IEB=50μA ≥4 ≥4 ≥4 ≥4 ≥4
10 VBE(sat) V IC=10mA,IB=1mA ≤1 ≤1 ≤1 ≤1 ≤1
11 VCE(sat) V IC=10mA,IB=1mA ≤0.35 ≤0.35 ≤0.35 ≤0.35 ≤0.35
12 hFE   VCE=6V,IC=2mA 40~270 40~270 40~270 40~270 40~270
13 fT MHz VCE=6V,IC=2mA,f=400MHz 800~1200 1000~1500 1000~1500 ≥1000 ≥1500
14 NF db VCE=6V,IC=1mA,f=100MHz ≤2.5        
15 NF db VCE=6V,IC=1mA,f=600MHz   ≤3 ≤2.5    
                                                                                                                                                                                                                                                                                                   允许测试误差±10%

NPN型金属封装硅高频小功率晶体管hFE分档表

hFE 40~55 55~80 80~120 120~180 180~270
色标 绿
3DG51 型晶体管封装尺寸图

3DG51 型晶体管封装尺寸图