| Density | 64M |
| I/O Pins | 8 |
| Interface Type | SPI |
| Page Size (Bytes) | 256 |
| Vcc (V) | 2.7-3.6 |
| Pb-Free Packages | UDFN 8 SOIC (300mil)16 |
64-Mbit, 2.7-Volt Minimum, 100 MHz SPI Serial Flash Memory, Byte and Page Program, Block Erase (4KB, 32KB, and 64KB) and Chip Erase, Individual Sector Protection with Global Protect/Unprotect Feature, Hardware and Software Locking, Sector Lockdown (ROM), Security Register, Program/Erase Suspend/Resume, Automatic Erase/Program Fail Checking/Reporting, Dual-Input Programming, Dual-Output Read, JEDEC Standard ID, 16-Lead SOIC (300-mil) and 8-Contact VDFN (6 mm x 8 mm x 1 mm).
The AT25DF641 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF641, with its erase granularity as small as 4-Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT25DF641 have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. The AT25DF641 also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DF641 incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to initial programming. To take code and data protection to the next level, the AT25DF641 incorporates a sector lockdown mechanism that allows any combination of individual 64-Kbyte sectors to be locked down and become permanently read-only. This addresses the need of certain secure applications that require portions of the Flash memory array to be permanently protected against malicious attempts at altering program code, data modules, security information, or encryption/decryption algorithms, keys, and routines. The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.Specifically designed for use in 3-volt systems, the AT25DF641 supports read, program, and erase operations with a supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing.
| Ordering Code | Package | Lead Finish | Operating Voltage | Max. Freq. (MHz) |
Operation Range |
| AT25DF641-S3H-B AT25DF641-S3H-T |
16S | NiPdAu | 2.7V to 3.6V | 100 | Industrial (-40°C to +85°C) |
| AT25DF641-MWH-Y AT25DF641-MWH-T |
8MW1 | NiPdAu | 2.7V to 3.6V | 100 | Industrial (-40°C to +85°C) |