ADG636: 1pC Charge Injection, 100pA Leakage CMOS Dual SPDT Switch

The ADG636 is a monolithic device, comprising of two independantly selectable CMOS SPDT (Single Pole, Double Throw) switches. Each switch conducts equally well in both directions when on. The ADG636 operates from a dual ±2.7 V to ±5.5 supply, or from a single supply of +2.7 V to +5.5 V.

This switch offers ultra-low charge injection of 1 pC and leakage current of less than 250pA at 85oC. It offers on-resistance of 85 Ω typ, which is matched to within 6 Ω between channels. The ADG636 also has low power dissipation yet gives high switching speeds. The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.

ADG636 特点

1 pC Charge Injection
±2.7 V to ±5.5 V Dual Supply
+2.7 V to +5.5 V Single Supply
Automotive Temperature Range: –40°C to +125°C
100 pA (Max @ 25°C) Leakage Currents
85 Ω Typical On Resistance
Rail-to-Rail Operation
Fast Switching Times
Typical Power Consumption (<0.1 uW)
TTL/CMOS Compatible Inputs
14-Lead TSSOP Package

ADG636 功能框图

ADG636 芯片订购指南

产品型号	产品状态	封装	引脚	温度范围
ADG636YRU	量产	14 ld TSSOP	14	汽车级
ADG636YRU-REEL	量产	14 ld TSSOP	14	汽车级
ADG636YRU-REEL7	量产	14 ld TSSOP	14	汽车级
ADG636YRUZ	量产	14 ld TSSOP	14	汽车级
ADG636YRUZ-REEL	量产	14 ld TSSOP	14	汽车级
ADG636YRUZ-REEL7	量产	14 ld TSSOP	14	汽车级