The TLC27L2 and TLC27L7 dual operational amplifiers combine a wide range of   input offset voltage grades with low offset voltage drift, high input impedance,   extremely low power, and high gain.
These devices use Texas Instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and low power consumption make these cost-effective devices ideal for high gain, low frequency, low power applications. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L2 (10 mV) to the high-precision TLC27L7 (500 uV).
| TLC27L2 | |
| Number of Channels | 2 | 
| Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 3 | 
| Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 16 | 
| Iq per channel(Max)(mA) | 0.017 | 
| GBW(Typ)(MHz) | 0.085 | 
| Slew Rate(Typ)(V/us) | 0.03 | 
| VIO (25 deg C)(Max)(mV) | 10 | 
| Offset Drift(Typ)(uV/C) | 1.1 | 
| IIB(Max)(pA) | 60 | 
| CMRR(Min)(dB) | 65 | 
| Vn at 1kHz(Typ)(nV/rtHz) | 68 | 
| Rating | Catalog | 
| Pin/Package | 8PDIP, 8SO, 8SOIC, 8TSSOP | 
| Approx. Price (US$) | 0.33 | 1ku | 
| Operating Temperature Range(C) | -40 to 85,0 to 70 | 
| 器件 | 状态 | 温度 | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 | 
| TLC27L2CD | ACTIVE | 0 to 70 | 0.45 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLC27L2CDG4 | ACTIVE | 0 to 70 | 0.45 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLC27L2CDR | ACTIVE | 0 to 70 | 0.37 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLC27L2CDRG4 | ACTIVE | 0 to 70 | 0.37 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLC27L2CP | ACTIVE | 0 to 70 | 0.37 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
| TLC27L2CPE4 | ACTIVE | 0 to 70 | 0.37 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
| TLC27L2ID | ACTIVE | -40 to 85 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLC27L2IDG4 | ACTIVE | -40 to 85 | 0.47 | 1ku | SOIC (D) | 8 | 75 | TUBE | |
| TLC27L2IDR | ACTIVE | -40 to 85 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLC27L2IDRG4 | ACTIVE | -40 to 85 | 0.39 | 1ku | SOIC (D) | 8 | 2500 | LARGE T&R | |
| TLC27L2IP | ACTIVE | -40 to 85 | 0.39 | 1ku | PDIP (P) | 8 | 50 | TUBE | |
| TLC27L2IPE4 | ACTIVE | 0 to 70 | 0.39 | 1ku | PDIP (P) | 8 | 50 | TUBE | 
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 | 
| TLC27L2CD | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2CD | TLC27L2CD | 
| TLC27L2CDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2CDG4 | TLC27L2CDG4 | 
| TLC27L2CDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2CDR | TLC27L2CDR | 
| TLC27L2CDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2CDRG4 | TLC27L2CDRG4 | 
| TLC27L2CP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L2CP | TLC27L2CP | 
| TLC27L2CPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L2CPE4 | TLC27L2CPE4 | 
| TLC27L2ID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2ID | TLC27L2ID | 
| TLC27L2IDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2IDG4 | TLC27L2IDG4 | 
| TLC27L2IDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2IDR | TLC27L2IDR | 
| TLC27L2IDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L2IDRG4 | TLC27L2IDRG4 | 
| TLC27L2IP | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L2IP | TLC27L2IP | 
| TLC27L2IPE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L2IPE4 | TLC27L2IPE4 |