| CSD16340Q3 | |
| VDS(V) | 25 |
| VGS(V) | +10/-8 |
| VGSTH(V) | 0.85 |
| RDS(on) at VGS=4.5V(mOhm) | 4.3 |
| QGD(nC) | 1.2 |
| QGS(nC) | 2.1 |
| QG(nC) | 6.5 |
| Operating Temperature Range(°C) | -55 to 150 |
| Pin/Package | 8SON |
The NexFETTM power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
| 器件 | 状态 | 温度 (oC) | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
| CSD16340Q3 | ACTIVE | -55 to 150 | 1.25 | 1ku | SON (DQH) | 8 | 2500 | LARGE T&R |
| 器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
| CSD16340Q3 | Pb-Free (RoHS Exempt) | Call TI | Level-1-260C-UNLIM | CSD16340Q3 |