The TLC27L4 and TLC27L9 quad operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, extremely low power, and high gain.
These devices use Texas instruments silicon-gate LinCMOSTM technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and low-power consumption make these cost-effective devices ideal for high-gain, low- frequency, low-power applications. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L4 (10 mV) to the high-precision TLC27L9 (900 uV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs
TLC27L9 | |
Number of Channels | 4 |
Total Supply Voltage (V)(Min)(+5V=5, +/-5V=10) | 3 |
Total Supply Voltage (V)(Max)(+5V=5, +/-5V=10) | 16 |
Iq per channel(Max)(mA) | 0.017 |
GBW(Typ)(MHz) | 0.085 |
Slew Rate(Typ)(V/us) | 0.03 |
VIO (25 deg C)(Max)(mV) | 0.9 |
Offset Drift(Typ)(uV/C) | 1.1 |
IIB(Max)(pA) | 600 |
CMRR(Min)(dB) | 65 |
Vn at 1kHz(Typ)(nV/rtHz) | 70 |
Rating | Military |
Pin/Package | 14PDIP, 14SO, 14SOIC |
Operating Temperature Range(C) | 1.05 | 1ku |
Approx. Price (US$) | -40 to 85,0 to 70 |
器件 | 状态 | 温度 | 价格(美元) | 封装 | 引脚 | 封装数量 | 封装载体 | 丝印标记 |
TLC27L9CD | ACTIVE | 0 to 70 | 1.25 | 1ku | SOIC (D) | 14 | 50 | TUBE | |
TLC27L9CDG4 | ACTIVE | 0 to 70 | 1.25 | 1ku | SOIC (D) | 14 | 50 | TUBE | |
TLC27L9CDR | ACTIVE | 0 to 70 | 1.05 | 1ku | SOIC (D) | 14 | 2500 | LARGE T&R | |
TLC27L9CDRG4 | ACTIVE | 0 to 70 | 1.05 | 1ku | SOIC (D) | 14 | 2500 | LARGE T&R | |
TLC27L9CN | ACTIVE | 0 to 70 | 1.05 | 1ku | PDIP (N) | 14 | 25 | TUBE | |
TLC27L9CNE4 | ACTIVE | 0 to 70 | 1.05 | 1ku | PDIP (N) | 14 | 25 | TUBE | |
TLC27L9CNSR | ACTIVE | 0 to 70 | 1.05 | 1ku | SO (NS) | 14 | 2000 | LARGE T&R | |
TLC27L9CNSRG4 | ACTIVE | 0 to 70 | 1.05 | 1ku | SO (NS) | 14 | 2000 | LARGE T&R | |
TLC27L9ID | ACTIVE | -40 to 85 | 1.30 | 1ku | SOIC (D) | 14 | 50 | TUBE | |
TLC27L9IDG4 | ACTIVE | -40 to 85 | 1.30 | 1ku | SOIC (D) | 14 | 50 | TUBE | |
TLC27L9IDR | ACTIVE | -40 to 85 | 1.10 | 1ku | SOIC (D) | 14 | 2500 | LARGE T&R | |
TLC27L9IDRG4 | ACTIVE | -40 to 85 | 1.10 | 1ku | SOIC (D) | 14 | 2500 | LARGE T&R | |
TLC27L9IN | ACTIVE | -40 to 85 | 1.10 | 1ku | PDIP (N) | 14 | 25 | TUBE | |
TLC27L9INE4 | ACTIVE | -40 to 85 | 1.10 | 1ku | PDIP (N) | 14 | 25 | TUBE |
器件 | 环保计划* | 铅/焊球涂层 | MSL 等级/回流焊峰 | 环保信息与无铅 (Pb-free) | DPPM / MTBF / FIT 率 |
TLC27L9CD | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9CD | TLC27L9CD |
TLC27L9CDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9CDG4 | TLC27L9CDG4 |
TLC27L9CDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9CDR | TLC27L9CDR |
TLC27L9CDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9CDRG4 | TLC27L9CDRG4 |
TLC27L9CN | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L9CN | TLC27L9CN |
TLC27L9CNE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L9CNE4 | TLC27L9CNE4 |
TLC27L9CNSR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9CNSR | TLC27L9CNSR |
TLC27L9CNSRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9CNSRG4 | TLC27L9CNSRG4 |
TLC27L9ID | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9ID | TLC27L9ID |
TLC27L9IDG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9IDG4 | TLC27L9IDG4 |
TLC27L9IDR | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9IDR | TLC27L9IDR |
TLC27L9IDRG4 | Green (RoHS & no Sb/Br) | CU NIPDAU | Level-1-260C-UNLIM | TLC27L9IDRG4 | TLC27L9IDRG4 |
TLC27L9IN | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L9IN | TLC27L9IN |
TLC27L9INE4 | Pb-Free (RoHS) | CU NIPDAU | N/A for Pkg Type | TLC27L9INE4 | TLC27L9INE4 |