CSD86311W1723 双路 P 通道 NexFETTM 功率 MOSFET
|
CSD86311W1723 |
VDS(V) |
25 |
VGS(V) |
+10/-8 |
VGSTH(V) |
1 |
RDS(on) at VGS=4.5V(mOhm) |
31 |
QGD(nC) |
0.33 |
QGS(nC) |
0.85 |
QG(nC) |
3.1 |
Operating Temperature Range(°C) |
-55 to 150 |
Pin/Package |
12DSBGA |
CSD86311W1723 描述
The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications
CSD86311W1723 特性
- Dual N-Ch MOSFETs
- Common Source Configuration
- Small Footprint 1.7 mm × 2.3 mm
- Ultra Low Qg and Qgd
- Pb Free
- RoHS Compliant
- Halogen Free
- APPLICATIONS
- Battery Management
- Battery Protection
- DC-DC Converters
CSD86311W1723 芯片订购指南
器件 |
状态 |
温度 (oC) |
价格(美元) |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
CSD86311W1723 |
ACTIVE |
-55 to 150 |
0.80 | 1ku |
DSBGA (YZG) | 12 |
3000 | LARGE T&R |
|
CSD86311W1723 质量与无铅数据
器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
CSD86311W1723 |
Green (RoHS & no Sb/Br) |
SNAGCU |
Level-1-260C-UNLIM |
CSD86311W1723 |
CSD86311W1723 |
CSD86311W1723 应用技术支持与电子电路设计开发资源下载
- CSD86311W1723 数据资料 dataSheet 下载.PDF
- TI 德州仪器MOSFET 驱动器选型与价格参考 . xls
- Dual MOSFET Driver
(PDF 498 KB)
- 全面认识开关型电源中的BUCK-BOOST功率级 (Rev. A)
(PDF 2206 KB)
- Understanding Boost Power Stages In Switchmode Power Supplies
(PDF 149 KB)
- Understanding Buck Power Stages In Switchmode Power Supplies
(PDF 173 KB)
- 标准线性产品交叉参考 (Rev. D)
(PDF 1058 KB)
- 模数规格和性能特性术语表 (Rev. A) (PDF 1993 KB)
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)