BQ2201 SRAM 非易失性控制器 IC，用于 1 个 SRAM 内存组
BQ2201 描述
The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.
During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.
The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.
|
BQ2201 |
| Supply Voltage(V) |
5 |
| Pin/Package |
8PDIP, 8SOIC |
| Approx. Price (US$) |
1.85 | 1ku |
BQ2201 特性
- Power monitoring and switching for 3-volt battery-backup applications
- Write-protect control
- 3-volt primary cell inputs
- Less than 10ns chip-enable propagation delay
- 5% or 10% supply operation
BQ2201 芯片订购指南
| 器件 |
状态 |
温度 (oC) |
价格（美元） |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
| BQ2201PN |
ACTIVE |
0 to 70 |
1.85 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
2201PN |
| BQ2201PNE4 |
ACTIVE |
0 to 70 |
1.85 | 1ku |
PDIP (P) | 8 |
50 | TUBE |
2201PN |
| BQ2201SN |
ACTIVE |
0 to 70 |
2.25 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
2201 |
| BQ2201SN-N |
ACTIVE |
-40 to 85 |
2.25 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
2201 |
| BQ2201SN-NG4 |
ACTIVE |
-40 to 85 |
2.25 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
2201 |
| BQ2201SN-NTR |
ACTIVE |
-40 to 85 |
1.85 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
2201 |
| BQ2201SN-NTRG4 |
ACTIVE |
-40 to 85 |
1.85 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
2201 |
| BQ2201SNG4 |
ACTIVE |
0 to 70 |
2.25 | 1ku |
SOIC (D) | 8 |
75 | TUBE |
2201 |
| BQ2201SNTR |
ACTIVE |
0 to 70 |
1.85 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
2201 |
| BQ2201SNTRG4 |
ACTIVE |
0 to 70 |
1.85 | 1ku |
SOIC (D) | 8 |
2500 | LARGE T&R |
2201 |
BQ2201 质量与无铅数据
| 器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
| BQ2201PN |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
BQ2201PN |
BQ2201PN |
| BQ2201PNE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
BQ2201PNE4 |
BQ2201PNE4 |
| BQ2201SN |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2201SN |
BQ2201SN |
| BQ2201SN-N |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2201SN-N |
BQ2201SN-N |
| BQ2201SN-NG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2201SN-NG4 |
BQ2201SN-NG4 |
| BQ2201SN-NTR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2201SN-NTR |
BQ2201SN-NTR |
| BQ2201SN-NTRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2201SN-NTRG4 |
BQ2201SN-NTRG4 |
| BQ2201SNG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2201SNG4 |
BQ2201SNG4 |
| BQ2201SNTR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2201SNTR |
BQ2201SNTR |
| BQ2201SNTRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2201SNTRG4 |
BQ2201SNTRG4 |
BQ2201 应用技术支持与电子电路设计开发资源下载
- BQ2201 数据资料 dataSheet 下载.PDF
- TI 德州仪器NVSRAM（非易失性 SRAM）产品选型与价格 . xls
- PowerPADTM Thermally Enhanced Package
(PDF 1040 KB)
- 全面认识开关型电源中的BUCK-BOOST功率级 (Rev. A)
(PDF 2206 KB)
- Shelf-Life Evaluation of Lead-Free Component Finishes (PDF 1305 KB)
- PowerPADTM Made Easy (PDF 57 KB)
- 标准线性产品交叉参考 (Rev. D)
(PDF 1058 KB)
- 模数规格和性能特性术语表 (Rev. A) (PDF 1993 KB)
- 所选封装材料的热学和电学性质 (PDF 645 KB)
- 高速数据转换 (PDF 1967 KB)
BQ2201 相关工具
| 名称 |
型号 |
公司 |
工具/软件类型 |
| BQ2201 评估模块 |
BQ2201EVM |
Texas Instruments |
开发电路板/EVM |