BQ2003 具有负 dV 和 dT/dt 终端的镍镉电池/镍氢电池开关模式充电管理 IC
BQ2003 描述
The bq2003 Fast Charge IC provides comprehensive fast charge control functions together with high-speed switching power control circuitry on a monolithic CMOS device.
Integration of closed-loop current control circuitry allows the bq2003 to be the basis of a cost-effective solution for stand-alone and system-integrated chargers for batteries of one or more cells.
Switch-activated discharge-before-charge allows bq2003-based chargers to support battery conditioning and capacity determination.
High-efficiency power conversion is accomplished using the bq2003 as a hysteretic PWM controller for switch-mode regulation of the charging current. The bq2003 may alternatively be used to gate an externally regulated charging current
|
BQ2003 |
# Series Cells |
Multiple |
Charge Current(Max)(A) |
>2 |
Charge Status Outputs |
2 |
Control Topology |
Switchmode |
Switching Frequency(kHz) |
300 |
Primary Charge Termination Method |
(-)dV, dT/dt |
Pin/Package |
16PDIP, 16SOIC |
Vin(Max)(V) |
7 |
BQ2003 特性
- Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries
- Hysteretic PWM switch-mode current regulation or gated control of an external regulator
- Easily integrated into systems or used as a stand-alone charger
- Pre-charge qualification of temperature and voltage
- Direct LED outputs display battery and charge status
- Fast-charge termination by V, maximum voltage, maximum temperature, and maximum time
- Optional top-off charge
BQ2003 芯片订购指南
器件 |
状态 |
温度 (oC) |
价格(美元) |
封装 | 引脚 |
封装数量 | 封装载体 |
丝印标记 |
BQ2003PN |
ACTIVE |
0 to 70 |
2.20 | 1ku |
PDIP (N) | 16 |
25 | TUBE |
|
BQ2003PN-N |
ACTIVE |
-40 to 85 |
2.20 | 1ku |
PDIP (N) | 16 |
25 | TUBE |
|
BQ2003PNE4 |
ACTIVE |
0 to 70 |
2.20 | 1ku |
PDIP (N) | 16 |
25 | TUBE |
|
BQ2003S |
ACTIVE |
0 to 70 |
2.65 | 1ku |
SOIC (DW) | 16 |
40 | TUBE |
|
BQ2003S-N |
ACTIVE |
-40 to 85 |
2.65 | 1ku |
SOIC (DW) | 16 |
40 | TUBE |
|
BQ2003S-NG4 |
ACTIVE |
-40 to 85 |
2.65 | 1ku |
SOIC (DW) | 16 |
40 | TUBE |
|
BQ2003S-NTR |
ACTIVE |
-40 to 85 |
2.20 | 1ku |
SOIC (DW) | 16 |
2000 | LARGE T&R |
|
BQ2003S-NTRG4 |
ACTIVE |
-40 to 85 |
2.20 | 1ku |
SOIC (DW) | 16 |
2000 | LARGE T&R |
|
BQ2003SG4 |
ACTIVE |
0 to 70 |
2.65 | 1ku |
SOIC (DW) | 16 |
40 | TUBE |
|
BQ2003STR |
ACTIVE |
0 to 70 |
2.20 | 1ku |
SOIC (DW) | 16 |
2000 | LARGE T&R |
|
BQ2003STRG4 |
ACTIVE |
0 to 70 |
2.20 | 1ku |
SOIC (DW) | 16 |
2000 | TUBE |
|
BQ2003 质量与无铅数据
器件 |
环保计划* |
铅/焊球涂层 |
MSL 等级/回流焊峰 |
环保信息与无铅 (Pb-free) |
DPPM / MTBF / FIT 率 |
BQ2003PN |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
BQ2003PN |
BQ2003PN |
BQ2003PN-N |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
BQ2003PN-N |
BQ2003PN-N |
BQ2003PNE4 |
Pb-Free (RoHS) |
CU NIPDAU |
N/A for Pkg Type |
BQ2003PNE4 |
BQ2003PNE4 |
BQ2003S |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2003S |
BQ2003S |
BQ2003S-N |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2003S-N |
BQ2003S-N |
BQ2003S-NG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2003S-NG4 |
BQ2003S-NG4 |
BQ2003S-NTR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2003S-NTR |
BQ2003S-NTR |
BQ2003S-NTRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2003S-NTRG4 |
BQ2003S-NTRG4 |
BQ2003SG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2003SG4 |
BQ2003SG4 |
BQ2003STR |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2003STR |
BQ2003STR |
BQ2003STRG4 |
Green (RoHS & no Sb/Br) |
CU NIPDAU |
Level-1-260C-UNLIM |
BQ2003STRG4 |
BQ2003STRG4 |
BQ2003 应用技术支持与电子电路设计开发资源下载
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