M48Z2M1V 5V或3.3V的,16兆位( 2MB的× 8 ) ZEROPOWER ?SRAM

The M48Z2M1Y/V ZEROPOWER? RAM is a nonvolatile 16,777,216-bit, Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36-pin DIP, long Module.

The ZEROPOWER RAM replaces industry standard SRAMs. It provides the nonvolatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed.

M48Z2M1V 产品特性:

• INTEGRATED, ULTRA LOW POWER SRAM,
  POWER-FAIL CONTROL CIRCUIT, AND
  BATTERIES
• CONVENTIONAL SRAM OPERATION;
  UNLIMITED WRITE CYCLES
• 10 YEARS OF DATA RETENTION IN THE
  ABSENCE OF POWER
• AUTOMATIC POWER-FAIL CHIP
  DESELECT AND WRITE PROTECTION
• WRITE PROTECT VOLTAGES
  (VPFD = Power-fail Deselect Voltage):
  – M48Z2M1Y: VCC = 4.5 to 5.5V
  4.2V ≤ VPFD ≤ 4.5V
  – M48Z2M1V: VCC = 3.0 to 3.6V
  2.8V ≤ VPFD ≤ 3.0V
• BATTERIES ARE INTERNALLY ISOLATED
  UNTIL POWER IS APPLIED
• PIN AND FUNCTION COMPATIBLE WITH
  JEDEC STANDARD 2Mb x 8 SRAMs

M48Z2M1V 技术支持与电子电路设计开发资源下载

1. M48Z2M1V 数据手册DataSheet下载.PDF
2. 相关产品选型( Excel 文档格式)
3. 非易失性RAM产品选择指南 (PDF, 800Kb)
4. NVRAM选型指南
5. ST和竞争对手Atmel、Macronix、Holtek、Oki、Winbond的对照 (产品彩页, PDF)
6. RFID和射频内存产品 . PDF
7. 提升灵活性与world'sn ° 1 EEPROM的供应商. PDF
8. 意法半导体应用支持. PDF
9. 汽车级 半导体器件. PDF
10. 周围半导体 机顶盒应用. PDF